| 9847448 |
Forming LED structures on silicon fins |
Sansaptak Dasgupta, Han Wui Then, Robert S. Chau, Marko Radosavljevic, Benjamin Chu-Kung |
2017-12-19 |
| 9847432 |
Forming III-V device structures on (111) planes of silicon fins |
Sansaptak Dasgupta, Han Wui Then, Benjamin Chu-Kung, Marko Radosavljevic, Seung Hoon Sung +1 more |
2017-12-19 |
| 9837499 |
Self-aligned gate last III-N transistors |
Han Wui Then, Sansaptak Dasgupta, Seung Hoon Sung, Marko RADOSAVLIJEVIC, Robert S. Chau |
2017-12-05 |
| 9806203 |
Nonplanar III-N transistors with compositionally graded semiconductor channels |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +1 more |
2017-10-31 |
| 9716149 |
Group III-N transistors on nanoscale template structures |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +1 more |
2017-07-25 |
| 9698222 |
Method of fabricating semiconductor structures on dissimilar substrates |
Benjamin Chu-Kung, Sherry R. Taft, Van H. Le, Sansaptak Dasgupta, Seung Hoon Sung +3 more |
2017-07-04 |
| 9698013 |
Methods and structures to prevent sidewall defects during selective epitaxy |
Niloy Mukherjee, Niti Goel, Pragyansri Pathi, Matthew V. Metz, Sansaptak Dasgupta +6 more |
2017-07-04 |
| 9673045 |
Integration of III-V devices on Si wafers |
Sansaptak Dasgupta, Han Wui Then, Seung Hoon Sung, Marko Radosavljevic, Benjamin Chu-Kung +1 more |
2017-06-06 |
| 9660085 |
Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof |
Han Wui Then, Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung +2 more |
2017-05-23 |
| 9660064 |
Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stack |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Seung Hoon Sung, Benjamin Chu-Kung +1 more |
2017-05-23 |
| 9640422 |
III-N devices in Si trenches |
Sansaptak Dasgupta, Han Wui Then, Seung Hoon Sung, Marko Radosavljevic, Benjamin Chu-Kung +3 more |
2017-05-02 |
| 9590069 |
Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Niti Goel +3 more |
2017-03-07 |