| 9847432 |
Forming III-V device structures on (111) planes of silicon fins |
Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Benjamin Chu-Kung, Marko Radosavljevic +1 more |
2017-12-19 |
| 9837499 |
Self-aligned gate last III-N transistors |
Han Wui Then, Sansaptak Dasgupta, Sanaz K. Gardner, Marko RADOSAVLIJEVIC, Robert S. Chau |
2017-12-05 |
| 9806203 |
Nonplanar III-N transistors with compositionally graded semiconductor channels |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner +1 more |
2017-10-31 |
| 9716149 |
Group III-N transistors on nanoscale template structures |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner +1 more |
2017-07-25 |
| 9698222 |
Method of fabricating semiconductor structures on dissimilar substrates |
Benjamin Chu-Kung, Sherry R. Taft, Van H. Le, Sansaptak Dasgupta, Sanaz K. Gardner +3 more |
2017-07-04 |
| 9698013 |
Methods and structures to prevent sidewall defects during selective epitaxy |
Niloy Mukherjee, Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz +6 more |
2017-07-04 |
| 9673045 |
Integration of III-V devices on Si wafers |
Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Marko Radosavljevic, Benjamin Chu-Kung +1 more |
2017-06-06 |
| 9666583 |
Methods of containing defects for non-silicon device engineering |
Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Willy Rachmady +6 more |
2017-05-30 |
| 9666708 |
III-N transistors with enhanced breakdown voltage |
Han Wui Then, Benjamin Chu-Kung, Sansaptak Dasgupta, Robert S. Chau, Ravi Pillarisetty +1 more |
2017-05-30 |
| 9660085 |
Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof |
Han Wui Then, Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung +2 more |
2017-05-23 |
| 9660064 |
Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stack |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner, Benjamin Chu-Kung +1 more |
2017-05-23 |
| 9640671 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Jessica S. Kachian, Jack T. Kavalieros +5 more |
2017-05-02 |
| 9640422 |
III-N devices in Si trenches |
Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Marko Radosavljevic, Benjamin Chu-Kung +3 more |
2017-05-02 |
| 9634007 |
Trench confined epitaxially grown device layer(s) |
Ravi Pillarisetty, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta, Van H. Le +7 more |
2017-04-25 |
| 9590069 |
Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Niti Goel +3 more |
2017-03-07 |
| 9590089 |
Variable gate width for gate all-around transistors |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jack T. Kavalieros, Robert S. Chau |
2017-03-07 |
| 9579624 |
Gas reactor devices with microplasma arrays encapsulated in defect free oxide |
J. Gary Eden, Sung-Jin Park, Jin Hoon Cho, Min Hwan Kim |
2017-02-28 |