| 9853107 |
Selective epitaxially grown III-V materials based devices |
Matthew V. Metz, Jack T. Kavalieros, Gilbert Dewey, Willy Rachmady, Benjamin Chu-Kung +3 more |
2017-12-26 |
| 9847448 |
Forming LED structures on silicon fins |
Sansaptak Dasgupta, Robert S. Chau, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner |
2017-12-19 |
| 9847432 |
Forming III-V device structures on (111) planes of silicon fins |
Sansaptak Dasgupta, Sanaz K. Gardner, Benjamin Chu-Kung, Marko Radosavljevic, Seung Hoon Sung +1 more |
2017-12-19 |
| 9837499 |
Self-aligned gate last III-N transistors |
Sansaptak Dasgupta, Seung Hoon Sung, Sanaz K. Gardner, Marko RADOSAVLIJEVIC, Robert S. Chau |
2017-12-05 |
| 9818847 |
Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface |
Gilbert Dewey, Robert S. Chau, Marko Radosavljevic, Scott B. Clendenning, Ravi Pillarisetty |
2017-11-14 |
| 9812574 |
Techniques and configurations for stacking transistors of an integrated circuit device |
Ravi Pillarisetty, Charles C. Kuo, Gilbert Dewey, Willy Rachmady, Van H. Le +3 more |
2017-11-07 |
| 9806203 |
Nonplanar III-N transistors with compositionally graded semiconductor channels |
Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung, Sanaz K. Gardner +1 more |
2017-10-31 |
| 9755062 |
III-N material structure for gate-recessed transistors |
Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty, Benjamin Chu-Kung +2 more |
2017-09-05 |
| 9748371 |
Transition metal dichalcogenide semiconductor assemblies |
Marko Radosavljevic, Brian S. Doyle, Ravi Pillarisetty, Niloy Mukherjee, Sansaptak Dasgupta +1 more |
2017-08-29 |
| 9716149 |
Group III-N transistors on nanoscale template structures |
Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more |
2017-07-25 |
| 9698222 |
Method of fabricating semiconductor structures on dissimilar substrates |
Benjamin Chu-Kung, Sherry R. Taft, Van H. Le, Sansaptak Dasgupta, Seung Hoon Sung +3 more |
2017-07-04 |
| 9691857 |
Group III-N nanowire transistors |
Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2017-06-27 |
| 9685508 |
High voltage field effect transistors |
Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more |
2017-06-20 |
| 9673045 |
Integration of III-V devices on Si wafers |
Sansaptak Dasgupta, Seung Hoon Sung, Sanaz K. Gardner, Marko Radosavljevic, Benjamin Chu-Kung +1 more |
2017-06-06 |
| 9666708 |
III-N transistors with enhanced breakdown voltage |
Benjamin Chu-Kung, Sansaptak Dasgupta, Robert S. Chau, Seung Hoon Sung, Ravi Pillarisetty +1 more |
2017-05-30 |
| 9660064 |
Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stack |
Sansaptak Dasgupta, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung, Benjamin Chu-Kung +1 more |
2017-05-23 |
| 9660085 |
Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof |
Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +2 more |
2017-05-23 |
| 9660067 |
III-N transistors with epitaxial layers providing steep subthreshold swing |
Sansaptak Dasgupta, Marko Radosavljevic, Robert S. Chau |
2017-05-23 |
| 9640422 |
III-N devices in Si trenches |
Sansaptak Dasgupta, Sanaz K. Gardner, Seung Hoon Sung, Marko Radosavljevic, Benjamin Chu-Kung +3 more |
2017-05-02 |
| 9640671 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more |
2017-05-02 |
| 9634007 |
Trench confined epitaxially grown device layer(s) |
Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta +7 more |
2017-04-25 |
| 9590069 |
Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation |
Sansaptak Dasgupta, Marko Radosavljevic, Niloy Mukherjee, Niti Goel, Sanaz K. Gardner +3 more |
2017-03-07 |
| 9583574 |
Epitaxial buffer layers for group III-N transistors on silicon substrates |
Sansaptak Dasgupta, Niloy Mukherjee, Marko Radosavljevic, Robert S. Chau |
2017-02-28 |