| 9853107 |
Selective epitaxially grown III-V materials based devices |
Matthew V. Metz, Jack T. Kavalieros, Willy Rachmady, Benjamin Chu-Kung, Marko Radosavljevic +3 more |
2017-12-26 |
$14,594,000 |
| 9818870 |
Transistor structure with variable clad/core dimension for stress and bandgap |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Marko Radosavljevic, Niloy Mukherjee +4 more |
2017-11-14 |
$11,178,000 |
| 9818847 |
Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface |
Robert S. Chau, Marko Radosavljevic, Han Wui Then, Scott B. Clendenning, Ravi Pillarisetty |
2017-11-14 |
$11,178,000 |
| 9812574 |
Techniques and configurations for stacking transistors of an integrated circuit device |
Ravi Pillarisetty, Charles C. Kuo, Han Wui Then, Willy Rachmady, Van H. Le +3 more |
2017-11-07 |
$13,901,000 |
| 9799759 |
Techniques for forming non-planar germanium quantum well devices |
Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung +4 more |
2017-10-24 |
$10,797,000 |
| 9768269 |
Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same |
Niloy Mukherjee, Matthew V. Metz, Jack T. Kavalieros, Nancy Zelick, Robert S. Chau |
2017-09-19 |
$8,005,000 |
| 9748338 |
Preventing isolation leakage in III-V devices |
Marko Radosavljevic, Ravi Pillarisetty, Benjamin Chu-Kung, Niloy Mukherjee |
2017-08-29 |
$8,286,000 |
| 9698013 |
Methods and structures to prevent sidewall defects during selective epitaxy |
Niloy Mukherjee, Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz +6 more |
2017-07-04 |
|
| 9691857 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Jack T. Kavalieros, Matthew V. Metz +3 more |
2017-06-27 |
$7,334,000 |
| 9685508 |
High voltage field effect transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Jack T. Kavalieros, Matthew V. Metz +3 more |
2017-06-20 |
$9,273,000 |
| 9685381 |
Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon |
Niti Goel, Ravi Pillarisetty, Willy Rachmady, Jack T. Kavalieros, Benjamin Chu-Kung +4 more |
2017-06-20 |
$9,273,000 |
| 9666583 |
Methods of containing defects for non-silicon device engineering |
Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Willy Rachmady +6 more |
2017-05-30 |
$12,187,000 |
| 9666492 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture |
Marko Radosavljevic, Ravi Pillarisetty, Niloy Mukherjee, Jack T. Kavalieros, Willy Rachmady +4 more |
2017-05-30 |
$12,187,000 |
| 9653559 |
Methods to enhance doping concentration in near-surface layers of semiconductors and methods of making same |
Niloy Mukherjee, Marko Radosavljevic, Niti Goel, Sanaz Kabehie, Matthew V. Metz +1 more |
2017-05-16 |
$8,597,000 |
| 9653548 |
Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack |
Marko Radosavljevic, Ravi Pillarisetty, Benjamin Chu-Kung, Niloy Mukherjee |
2017-05-16 |
$8,597,000 |
| 9640537 |
Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy |
Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more |
2017-05-02 |
$12,076,000 |
| 9640671 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more |
2017-05-02 |
$12,076,000 |
| 9640646 |
Semiconductor device having group III-V material active region and graded gate dielectric |
Marko Radosavljevic, Ravi Pillarisetty, Matthew V. Metz |
2017-05-02 |
$12,076,000 |
| 9640622 |
Selective epitaxially grown III-V materials based devices |
Niti Goel, Niloy Mukherjee, Matthew V. Metz, Marko Radosavljevic, Benjamin Chu-Kung +2 more |
2017-05-02 |
$12,076,000 |
| 9634007 |
Trench confined epitaxially grown device layer(s) |
Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta +7 more |
2017-04-25 |
$8,972,000 |
| 9583602 |
Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs |
Roza Kotlyar, Stephen M. Cea, Benjamin Chu-Kung, Uygar E. Avci, Rafael Rios +4 more |
2017-02-28 |
$9,011,000 |
| 9570614 |
Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation |
Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more |
2017-02-14 |
$9,787,000 |
| 9564490 |
Apparatus and methods for forming a modulation doped non-planar transistor |
Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Willy Rachmady, Jack T. Kavalieros |
2017-02-07 |
$9,424,000 |
