| 9711598 |
Two-dimensional condensation for uniaxially strained semiconductor fins |
Jack T. Kavalieros, Nancy Zelick, Been-Yih Jin, Markus Kuhn |
2017-07-18 |
| 9680013 |
Non-planar device having uniaxially strained semiconductor body and method of making same |
Roza Kotlyar, Jack T. Kavalieros, Martin D. Giles, Tahir Ghani, Kelin J. Kuhn +2 more |
2017-06-13 |
| 9673302 |
Conversion of strain-inducing buffer to electrical insulator |
Annalisa Cappellani, Van H. Le, Glenn A. Glass, Kelin J. Kuhn |
2017-06-06 |
| 9608059 |
Semiconductor device with isolated body portion |
Annalisa Cappellani, Tahir Ghani, Harry Gomez, Jack T. Kavalieros, Patrick H. Keys +5 more |
2017-03-28 |
| 9595581 |
Silicon and silicon germanium nanowire structures |
Kelin J. Kuhn, Seiyon Kim, Rafael Rios, Martin D. Giles, Annalisa Cappellani +3 more |
2017-03-14 |
| 9583602 |
Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs |
Roza Kotlyar, Gilbert Dewey, Benjamin Chu-Kung, Uygar E. Avci, Rafael Rios +4 more |
2017-02-28 |
| 9583491 |
CMOS nanowire structure |
Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Anand S. Murthy, Annalisa Cappellani +2 more |
2017-02-28 |
| 9570614 |
Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation |
Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more |
2017-02-14 |
| 9564522 |
Nanowire structures having non-discrete source and drain regions |
Annalisa Cappellani, Martin D. Giles, Rafael Rios, Seiyon Kim, Kelin J. Kuhn |
2017-02-07 |