| 9847448 |
Forming LED structures on silicon fins |
Han Wui Then, Robert S. Chau, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner |
2017-12-19 |
| 9847432 |
Forming III-V device structures on (111) planes of silicon fins |
Han Wui Then, Sanaz K. Gardner, Benjamin Chu-Kung, Marko Radosavljevic, Seung Hoon Sung +1 more |
2017-12-19 |
| 9837499 |
Self-aligned gate last III-N transistors |
Han Wui Then, Seung Hoon Sung, Sanaz K. Gardner, Marko RADOSAVLIJEVIC, Robert S. Chau |
2017-12-05 |
| 9806203 |
Nonplanar III-N transistors with compositionally graded semiconductor channels |
Han Wui Then, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung, Sanaz K. Gardner +1 more |
2017-10-31 |
| 9748371 |
Transition metal dichalcogenide semiconductor assemblies |
Marko Radosavljevic, Brian S. Doyle, Ravi Pillarisetty, Niloy Mukherjee, Han Wui Then +1 more |
2017-08-29 |
| 9716149 |
Group III-N transistors on nanoscale template structures |
Han Wui Then, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more |
2017-07-25 |
| 9698013 |
Methods and structures to prevent sidewall defects during selective epitaxy |
Niloy Mukherjee, Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz +6 more |
2017-07-04 |
| 9698222 |
Method of fabricating semiconductor structures on dissimilar substrates |
Benjamin Chu-Kung, Sherry R. Taft, Van H. Le, Seung Hoon Sung, Sanaz K. Gardner +3 more |
2017-07-04 |
| 9673045 |
Integration of III-V devices on Si wafers |
Han Wui Then, Seung Hoon Sung, Sanaz K. Gardner, Marko Radosavljevic, Benjamin Chu-Kung +1 more |
2017-06-06 |
| 9666708 |
III-N transistors with enhanced breakdown voltage |
Han Wui Then, Benjamin Chu-Kung, Robert S. Chau, Seung Hoon Sung, Ravi Pillarisetty +1 more |
2017-05-30 |
| 9660064 |
Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stack |
Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung, Benjamin Chu-Kung +1 more |
2017-05-23 |
| 9660085 |
Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof |
Han Wui Then, Robert S. Chau, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +2 more |
2017-05-23 |
| 9660067 |
III-N transistors with epitaxial layers providing steep subthreshold swing |
Han Wui Then, Marko Radosavljevic, Robert S. Chau |
2017-05-23 |
| 9640537 |
Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy |
Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more |
2017-05-02 |
| 9640422 |
III-N devices in Si trenches |
Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung, Marko Radosavljevic, Benjamin Chu-Kung +3 more |
2017-05-02 |
| 9634007 |
Trench confined epitaxially grown device layer(s) |
Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Van H. Le +7 more |
2017-04-25 |
| 9590069 |
Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation |
Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Niti Goel, Sanaz K. Gardner +3 more |
2017-03-07 |
| 9583396 |
Making a defect free fin based device in lateral epitaxy overgrowth region |
Niti Goel, Benjamin Chu-Kung, Niloy Mukherjee, Matthew V. Metz, Van H. Le +3 more |
2017-02-28 |
| 9583574 |
Epitaxial buffer layers for group III-N transistors on silicon substrates |
Han Wui Then, Niloy Mukherjee, Marko Radosavljevic, Robert S. Chau |
2017-02-28 |
| 9570614 |
Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation |
Ravi Pillarisetty, Niti Goel, Van H. Le, Marko Radosavljevic, Gilbert Dewey +8 more |
2017-02-14 |