Issued Patents 2017
Showing 1–25 of 58 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9853107 | Selective epitaxially grown III-V materials based devices | Matthew V. Metz, Jack T. Kavalieros, Gilbert Dewey, Willy Rachmady, Benjamin Chu-Kung +3 more | 2017-12-26 |
| 9847448 | Forming LED structures on silicon fins | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner | 2017-12-19 |
| 9847432 | Forming III-V device structures on (111) planes of silicon fins | Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Benjamin Chu-Kung, Marko Radosavljevic +1 more | 2017-12-19 |
| 9837499 | Self-aligned gate last III-N transistors | Han Wui Then, Sansaptak Dasgupta, Seung Hoon Sung, Sanaz K. Gardner, Marko RADOSAVLIJEVIC | 2017-12-05 |
| 9825095 | Hybrid phase field effect transistor | Ravi Pillarisetty, Brian S. Doyle, Elijah V. Karpov, David L. Kencke, Uday Shah +1 more | 2017-11-21 |
| 9818870 | Transistor structure with variable clad/core dimension for stress and bandgap | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +4 more | 2017-11-14 |
| 9818847 | Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface | Gilbert Dewey, Marko Radosavljevic, Han Wui Then, Scott B. Clendenning, Ravi Pillarisetty | 2017-11-14 |
| 9806195 | Method for fabricating transistor with thinned channel | Justin K. Brask, Suman Datta, Mark L. Doczy, Brian S. Doyle, Jack T. Kavalieros +3 more | 2017-10-31 |
| 9806203 | Nonplanar III-N transistors with compositionally graded semiconductor channels | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +1 more | 2017-10-31 |
| 9799759 | Techniques for forming non-planar germanium quantum well devices | Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung +4 more | 2017-10-24 |
| 9793373 | Field effect transistor structure with abrupt source/drain junctions | Anand S. Murthy, Patrick Morrow, Chia-Hong Jan, Paul Packan | 2017-10-17 |
| 9786786 | Non-planar quantum well device having interfacial layer and method of forming same | Willy Rachmady, Ravi Pillarisetty, Van H. Le | 2017-10-10 |
| 9779794 | Techniques for forming spin-transfer torque memory (STTM) elements having annular contacts | Brian S. Doyle, David L. Kencke, Kaan Oguz, Mark L. Doczy, Satyarth Suri +2 more | 2017-10-03 |
| 9768269 | Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same | Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Jack T. Kavalieros, Nancy Zelick | 2017-09-19 |
| 9761724 | Semiconductor device structures and methods of forming semiconductor structures | Justin K. Brask, Jack T. Kavalieros, Brian S. Doyle, Uday Shah, Suman Datta +1 more | 2017-09-12 |
| 9755062 | III-N material structure for gate-recessed transistors | Han Wui Then, Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty +2 more | 2017-09-05 |
| 9754996 | Write current reduction in spin transfer torque memory devices | Brian S. Doyle, David L. Kencke, Charles C. Kuo, Dmitri E. Nikonov | 2017-09-05 |
| 9748371 | Transition metal dichalcogenide semiconductor assemblies | Marko Radosavljevic, Brian S. Doyle, Ravi Pillarisetty, Niloy Mukherjee, Sansaptak Dasgupta +1 more | 2017-08-29 |
| 9748391 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Suman Datta, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2017-08-29 |
| 9741809 | Nonplanar device with thinned lower body portion and method of fabrication | Uday Shah, Brian S. Doyle, Justin K. Brask, Thomas A. Letson | 2017-08-22 |
| 9735270 | Semiconductor transistor having a stressed channel | Anand S. Murthy, Tahir Ghani, Kaizad Mistry | 2017-08-15 |
| 9735348 | High stability spintronic memory | Charles C. Kuo, Kaan Oguz, Brian S. Doyle, Elijah V. Karpov, Roksana Golizadeh Mojarad +1 more | 2017-08-15 |
| 9728238 | Spin transfer torque memory (STTM) device with half-metal and method to write and read the device | Charles C. Kuo, Roksana Golizadeh Mojarad, Brian S. Doyle, David L. Kencke, Kaan Oguz | 2017-08-08 |
| 9716149 | Group III-N transistors on nanoscale template structures | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner +1 more | 2017-07-25 |
| 9711591 | Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby | Niloy Mukherjee, Matthew V. Metz, James M. Powers, Van H. Le, Benjamin Chu-Kung +6 more | 2017-07-18 |