| 9853107 |
Selective epitaxially grown III-V materials based devices |
Matthew V. Metz, Jack T. Kavalieros, Gilbert Dewey, Willy Rachmady, Benjamin Chu-Kung +3 more |
2017-12-26 |
$14,594,000 |
| 9847448 |
Forming LED structures on silicon fins |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner |
2017-12-19 |
$19,551,000 |
| 9847432 |
Forming III-V device structures on (111) planes of silicon fins |
Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Benjamin Chu-Kung, Marko Radosavljevic +1 more |
2017-12-19 |
$19,551,000 |
| 9837499 |
Self-aligned gate last III-N transistors |
Han Wui Then, Sansaptak Dasgupta, Seung Hoon Sung, Sanaz K. Gardner, Marko RADOSAVLIJEVIC |
2017-12-05 |
$17,379,000 |
| 9825095 |
Hybrid phase field effect transistor |
Ravi Pillarisetty, Brian S. Doyle, Elijah V. Karpov, David L. Kencke, Uday Shah +1 more |
2017-11-21 |
$11,290,000 |
| 9818870 |
Transistor structure with variable clad/core dimension for stress and bandgap |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +4 more |
2017-11-14 |
$11,178,000 |
| 9818847 |
Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface |
Gilbert Dewey, Marko Radosavljevic, Han Wui Then, Scott B. Clendenning, Ravi Pillarisetty |
2017-11-14 |
$11,178,000 |
| 9806195 |
Method for fabricating transistor with thinned channel |
Justin K. Brask, Suman Datta, Mark L. Doczy, Brian S. Doyle, Jack T. Kavalieros +3 more |
2017-10-31 |
$13,240,000 |
| 9806203 |
Nonplanar III-N transistors with compositionally graded semiconductor channels |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +1 more |
2017-10-31 |
$13,240,000 |
| 9799759 |
Techniques for forming non-planar germanium quantum well devices |
Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung +4 more |
2017-10-24 |
$10,797,000 |
| 9793373 |
Field effect transistor structure with abrupt source/drain junctions |
Anand S. Murthy, Patrick Morrow, Chia-Hong Jan, Paul Packan |
2017-10-17 |
$9,876,000 |
| 9786786 |
Non-planar quantum well device having interfacial layer and method of forming same |
Willy Rachmady, Ravi Pillarisetty, Van H. Le |
2017-10-10 |
$9,084,000 |
| 9779794 |
Techniques for forming spin-transfer torque memory (STTM) elements having annular contacts |
Brian S. Doyle, David L. Kencke, Kaan Oguz, Mark L. Doczy, Satyarth Suri +2 more |
2017-10-03 |
$11,313,000 |
| 9768269 |
Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same |
Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Jack T. Kavalieros, Nancy Zelick |
2017-09-19 |
$8,005,000 |
| 9761724 |
Semiconductor device structures and methods of forming semiconductor structures |
Justin K. Brask, Jack T. Kavalieros, Brian S. Doyle, Uday Shah, Suman Datta +1 more |
2017-09-12 |
$10,213,000 |
| 9755062 |
III-N material structure for gate-recessed transistors |
Han Wui Then, Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty +2 more |
2017-09-05 |
$9,844,000 |
| 9754996 |
Write current reduction in spin transfer torque memory devices |
Brian S. Doyle, David L. Kencke, Charles C. Kuo, Dmitri E. Nikonov |
2017-09-05 |
$9,844,000 |
| 9748371 |
Transition metal dichalcogenide semiconductor assemblies |
Marko Radosavljevic, Brian S. Doyle, Ravi Pillarisetty, Niloy Mukherjee, Sansaptak Dasgupta +1 more |
2017-08-29 |
$8,286,000 |
| 9748391 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
Suman Datta, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz |
2017-08-29 |
$8,286,000 |
| 9741809 |
Nonplanar device with thinned lower body portion and method of fabrication |
Uday Shah, Brian S. Doyle, Justin K. Brask, Thomas A. Letson |
2017-08-22 |
$8,061,000 |
| 9735270 |
Semiconductor transistor having a stressed channel |
Anand S. Murthy, Tahir Ghani, Kaizad Mistry |
2017-08-15 |
$8,272,000 |
| 9735348 |
High stability spintronic memory |
Charles C. Kuo, Kaan Oguz, Brian S. Doyle, Elijah V. Karpov, Roksana Golizadeh Mojarad +1 more |
2017-08-15 |
$8,272,000 |
| 9728238 |
Spin transfer torque memory (STTM) device with half-metal and method to write and read the device |
Charles C. Kuo, Roksana Golizadeh Mojarad, Brian S. Doyle, David L. Kencke, Kaan Oguz |
2017-08-08 |
$11,912,000 |
| 9716149 |
Group III-N transistors on nanoscale template structures |
Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Sanaz K. Gardner +1 more |
2017-07-25 |
$17,281,000 |
| 9711591 |
Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby |
Niloy Mukherjee, Matthew V. Metz, James M. Powers, Van H. Le, Benjamin Chu-Kung +6 more |
2017-07-18 |
$6,909,000 |
