| 9853107 |
Selective epitaxially grown III-V materials based devices |
Matthew V. Metz, Jack T. Kavalieros, Gilbert Dewey, Benjamin Chu-Kung, Marko Radosavljevic +3 more |
2017-12-26 |
| 9818884 |
Strain compensation in transistors |
Van H. Le, Benjamin Chu-Kung, Jack T. Kavalieros, Ravi Pillarisetty, Harold W. Kennel |
2017-11-14 |
| 9818870 |
Transistor structure with variable clad/core dimension for stress and bandgap |
Van H. Le, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey, Niloy Mukherjee +4 more |
2017-11-14 |
| 9812574 |
Techniques and configurations for stacking transistors of an integrated circuit device |
Ravi Pillarisetty, Charles C. Kuo, Han Wui Then, Gilbert Dewey, Van H. Le +3 more |
2017-11-07 |
| 9799759 |
Techniques for forming non-planar germanium quantum well devices |
Ravi Pillarisetty, Jack T. Kavalieros, Uday Shah, Benjamin Chu-Kung, Marko Radosavljevic +4 more |
2017-10-24 |
| 9786786 |
Non-planar quantum well device having interfacial layer and method of forming same |
Ravi Pillarisetty, Van H. Le, Robert S. Chau |
2017-10-10 |
| 9704981 |
Techniques for forming contacts to quantum well transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Mantu K. Hudait, Marko Radosavljevic, Jack T. Kavalieros +2 more |
2017-07-11 |
| 9698265 |
Strained channel region transistors employing source and drain stressors and systems including the same |
Van H. Le, Harold W. Kennel, Ravi Pillarisetty, Jack T. Kavalieros, Niloy Mukherjee |
2017-07-04 |
| 9691848 |
Semiconductor devices with germanium-rich active layers and doped transition layers |
Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French, Aaron A. Budrevich |
2017-06-27 |
| 9685381 |
Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon |
Niti Goel, Ravi Pillarisetty, Jack T. Kavalieros, Gilbert Dewey, Benjamin Chu-Kung +4 more |
2017-06-20 |
| 9666583 |
Methods of containing defects for non-silicon device engineering |
Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Matthew V. Metz +6 more |
2017-05-30 |
| 9666492 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture |
Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more |
2017-05-30 |
| 9640671 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Van H. Le, Seung Hoon Sung, Jessica S. Kachian, Jack T. Kavalieros +5 more |
2017-05-02 |
| 9640537 |
Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy |
Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more |
2017-05-02 |
| 9634007 |
Trench confined epitaxially grown device layer(s) |
Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta +7 more |
2017-04-25 |
| 9627384 |
Transistors with high concentration of boron doped germanium |
Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Ravi Pillarisetty, Niloy Mukherjee +3 more |
2017-04-18 |
| 9614093 |
Strain compensation in transistors |
Van H. Le, Benjamin Chu-Kung, Harold Hal W. Kennel, Ravi Pillarisetty, Jack T. Kavalieros |
2017-04-04 |
| 9608055 |
Semiconductor device having germanium active layer with underlying diffusion barrier layer |
Van H. Le, Ravi Pillarisetty, Jack T. Kavalieros, Robert S. Chau, Harold W. Kennel |
2017-03-28 |
| 9595581 |
Silicon and silicon germanium nanowire structures |
Kelin J. Kuhn, Seiyon Kim, Rafael Rios, Stephen M. Cea, Martin D. Giles +3 more |
2017-03-14 |
| 9590089 |
Variable gate width for gate all-around transistors |
Van H. Le, Ravi Pillarisetty, Jack T. Kavalieros, Robert S. Chau, Seung Hoon Sung |
2017-03-07 |
| 9570614 |
Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation |
Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more |
2017-02-14 |
| 9564490 |
Apparatus and methods for forming a modulation doped non-planar transistor |
Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Gilbert Dewey, Jack T. Kavalieros |
2017-02-07 |