| 9825095 |
Hybrid phase field effect transistor |
Ravi Pillarisetty, Brian S. Doyle, Elijah V. Karpov, David L. Kencke, Charles C. Kuo +1 more |
2017-11-21 |
| 9818864 |
Vertical nanowire transistor with axially engineered semiconductor and gate metallization |
Brian S. Doyle, Roza Kotlyar, Charles C. Kuo |
2017-11-14 |
| 9799759 |
Techniques for forming non-planar germanium quantum well devices |
Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Benjamin Chu-Kung, Marko Radosavljevic +4 more |
2017-10-24 |
| 9793467 |
Method for reducing size and center positioning of magnetic memory element contacts |
Brian S. Doyle, Yong Ju Lee, Charles C. Kuo, David L. Kencke, Kaan Oguz +1 more |
2017-10-17 |
| 9761724 |
Semiconductor device structures and methods of forming semiconductor structures |
Justin K. Brask, Jack T. Kavalieros, Brian S. Doyle, Suman Datta, Amlan Majumdar +1 more |
2017-09-12 |
| 9755062 |
III-N material structure for gate-recessed transistors |
Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Ravi Pillarisetty, Benjamin Chu-Kung +2 more |
2017-09-05 |
| 9741809 |
Nonplanar device with thinned lower body portion and method of fabrication |
Brian S. Doyle, Justin K. Brask, Robert S. Chau, Thomas A. Letson |
2017-08-22 |
| 9653680 |
Techniques for filament localization, edge effect reduction, and forming/switching voltage reduction in RRAM devices |
Ravi Pillarisetty, Prashant Majhi, Niloy Mukherjee, Elijah V. Karpov, Brian S. Doyle +1 more |
2017-05-16 |
| 9577190 |
Thermal management structure for low-power nonvolatile filamentary switch |
Elijah V. Karpov, Prashant Majhi, Niloy Mukherjee, Ravi Pillarisetty, Brian S. Doyle +1 more |
2017-02-21 |
| 9548441 |
Perpendicular MTJ stacks with magnetic anisotrophy enhancing layer and crystallization barrier layer |
Kaan Oguz, Mark L. Doczy, Brian S. Doyle, David L. Kencke, Roksana Golizadeh Mojarad +1 more |
2017-01-17 |
| 9548449 |
Conductive oxide random access memory (CORAM) cell and method of fabricating same |
Elijah V. Karpov, Brian S. Doyle, Robert S. Chau |
2017-01-17 |