| 9818864 |
Vertical nanowire transistor with axially engineered semiconductor and gate metallization |
Brian S. Doyle, Uday Shah, Charles C. Kuo |
2017-11-14 |
| 9818870 |
Transistor structure with variable clad/core dimension for stress and bandgap |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +4 more |
2017-11-14 |
| 9680013 |
Non-planar device having uniaxially strained semiconductor body and method of making same |
Stephen M. Cea, Jack T. Kavalieros, Martin D. Giles, Tahir Ghani, Kelin J. Kuhn +2 more |
2017-06-13 |
| 9627384 |
Transistors with high concentration of boron doped germanium |
Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Ravi Pillarisetty, Niloy Mukherjee +3 more |
2017-04-18 |
| 9583602 |
Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs |
Stephen M. Cea, Gilbert Dewey, Benjamin Chu-Kung, Uygar E. Avci, Rafael Rios +4 more |
2017-02-28 |