| 9842928 |
Tensile source drain III-V transistors for mobility improved n-MOS |
Glenn A. Glass, Chandra S. Mohapatra |
2017-12-12 |
$18,742,000 |
| 9812524 |
Nanowire transistor devices and forming techniques |
Glenn A. Glass, Kelin J. Kuhn, Seiyon Kim, Daniel B. Aubertine |
2017-11-07 |
$13,901,000 |
| 9793373 |
Field effect transistor structure with abrupt source/drain junctions |
Robert S. Chau, Patrick Morrow, Chia-Hong Jan, Paul Packan |
2017-10-17 |
$9,876,000 |
| 9754940 |
Self-aligned contact metallization for reduced contact resistance |
Glenn A. Glass, Tahir Ghani |
2017-09-05 |
$9,844,000 |
| 9735270 |
Semiconductor transistor having a stressed channel |
Robert S. Chau, Tahir Ghani, Kaizad Mistry |
2017-08-15 |
$8,272,000 |
| 9728464 |
Self-aligned 3-D epitaxial structures for MOS device fabrication |
Glenn A. Glass, Daniel B. Aubertine, Gaurav Thareja, Tahir Ghani |
2017-08-08 |
$11,912,000 |
| 9722023 |
Selective germanium P-contact metalization through trench |
Glenn A. Glass, Tahir Ghani |
2017-08-01 |
$11,137,000 |
| 9705000 |
III-V layers for n-type and p-type MOS source-drain contacts |
Glenn A. Glass, Tahir Ghani |
2017-07-11 |
$8,311,000 |
| 9680016 |
Method for improving transistor performance through reducing the salicide interface resistance |
Boyan Boyanov, Glenn A. Glass, Thomas Hoffmann |
2017-06-13 |
$8,497,000 |
| 9660078 |
Enhanced dislocation stress transistor |
Cory E. Weber, Mark Liu, Hemant Deshpande, Daniel B. Aubertine |
2017-05-23 |
$7,972,000 |
| 9653584 |
Pre-sculpting of Si fin elements prior to cladding for transistor channel applications |
Glenn A. Glass, Daniel B. Aubertine, Subhash M. Joshi |
2017-05-16 |
$8,597,000 |
| 9640634 |
Field effect transistor structure with abrupt source/drain junctions |
Robert S. Chau, Patrick Morrow, Chia-Hong Jan, Paul Packan |
2017-05-02 |
$12,076,000 |
| 9633835 |
Transistor fabrication technique including sacrificial protective layer for source/drain at contact location |
Glenn A. Glass, Michael Jackson, Michael L. Hattendorf, Subhash M. Joshi |
2017-04-25 |
$8,972,000 |
| 9627384 |
Transistors with high concentration of boron doped germanium |
Glenn A. Glass, Tahir Ghani, Ravi Pillarisetty, Niloy Mukherjee, Jack T. Kavalieros +3 more |
2017-04-18 |
$8,310,000 |
| 9614060 |
Nanowire transistor with underlayer etch stops |
Seiyon Kim, Daniel B. Aubertine, Kelin J. Kuhn |
2017-04-04 |
$8,141,000 |
| 9583491 |
CMOS nanowire structure |
Seiyon Kim, Kelin J. Kuhn, Tahir Ghani, Annalisa Cappellani, Stephen M. Cea +2 more |
2017-02-28 |
$9,011,000 |
