| 9842944 |
Solid-source diffused junction for fin-based electronics |
Walid M. Hafez |
2017-12-12 |
| 9806095 |
High voltage three-dimensional devices having dielectric liners |
Walid M. Hafez, Jeng-Ya David Yeh, Curtis Tsai, Joodong Park, Gopinath Bhimarasetti |
2017-10-31 |
| 9799668 |
Memory cell having isolated charge sites and method of fabricating same |
Ting Chang, Walid M. Hafez |
2017-10-24 |
| 9793373 |
Field effect transistor structure with abrupt source/drain junctions |
Anand S. Murthy, Robert S. Chau, Patrick Morrow, Paul Packan |
2017-10-17 |
| 9786783 |
Transistor architecture having extended recessed spacer and source/drain regions and method of making same |
Walid M. Hafez, Joodong Park, Jeng-Ya David Yeh, Curtis Tsai |
2017-10-10 |
| 9780217 |
Non-planar semiconductor device having self-aligned fin with top blocking layer |
Jeng-Ya David Yeh, Walid M. Hafez, Joodong Park |
2017-10-03 |
| 9748327 |
Pillar resistor structures for integrated circuitry |
Chen-Guan Lee, Walid M. Hafez |
2017-08-29 |
| 9748252 |
Antifuse element utilizing non-planar topology |
Walid M. Hafez, Curtis Tsai, Joodong Park, Jeng-Ya David Yeh |
2017-08-29 |
| 9741721 |
Low leakage non-planar access transistor for embedded dynamic random access memory (eDRAM) |
Joodong Park, Gopinath Bhimarasetti, Rahul Ramaswamy, Walid M. Hafez, Jeng-Ya David Yeh +1 more |
2017-08-22 |
| 9640634 |
Field effect transistor structure with abrupt source/drain junctions |
Anand S. Murthy, Robert S. Chau, Patrick Morrow, Paul Packan |
2017-05-02 |
| 9570467 |
High voltage three-dimensional devices having dielectric liners |
Walid M. Hafez, Jeng-Ya David Yeh, Curtis Tsai, Joodong Park, Gopinath Bhimarasetti |
2017-02-14 |