Issued Patents 2017
Showing 25 most recent of 39 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9853107 | Selective epitaxially grown III-V materials based devices | Matthew V. Metz, Jack T. Kavalieros, Gilbert Dewey, Willy Rachmady, Benjamin Chu-Kung +3 more | 2017-12-26 |
| 9825095 | Hybrid phase field effect transistor | Brian S. Doyle, Elijah V. Karpov, David L. Kencke, Uday Shah, Charles C. Kuo +1 more | 2017-11-21 |
| 9818884 | Strain compensation in transistors | Van H. Le, Benjamin Chu-Kung, Jack T. Kavalieros, Willy Rachmady, Harold W. Kennel | 2017-11-14 |
| 9818870 | Transistor structure with variable clad/core dimension for stress and bandgap | Willy Rachmady, Van H. Le, Marko Radosavljevic, Gilbert Dewey, Niloy Mukherjee +4 more | 2017-11-14 |
| 9818847 | Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface | Gilbert Dewey, Robert S. Chau, Marko Radosavljevic, Han Wui Then, Scott B. Clendenning | 2017-11-14 |
| 9812574 | Techniques and configurations for stacking transistors of an integrated circuit device | Charles C. Kuo, Han Wui Then, Gilbert Dewey, Willy Rachmady, Van H. Le +3 more | 2017-11-07 |
| 9806193 | Stress in trigate devices using complimentary gate fill materials | Titash Rakshit, Martin D. Giles, Jack T. Kavalieros | 2017-10-31 |
| 9799759 | Techniques for forming non-planar germanium quantum well devices | Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung, Marko Radosavljevic +4 more | 2017-10-24 |
| 9786786 | Non-planar quantum well device having interfacial layer and method of forming same | Willy Rachmady, Van H. Le, Robert S. Chau | 2017-10-10 |
| 9755062 | III-N material structure for gate-recessed transistors | Han Wui Then, Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Benjamin Chu-Kung +2 more | 2017-09-05 |
| 9748371 | Transition metal dichalcogenide semiconductor assemblies | Marko Radosavljevic, Brian S. Doyle, Niloy Mukherjee, Sansaptak Dasgupta, Han Wui Then +1 more | 2017-08-29 |
| 9748338 | Preventing isolation leakage in III-V devices | Gilbert Dewey, Marko Radosavljevic, Benjamin Chu-Kung, Niloy Mukherjee | 2017-08-29 |
| 9736936 | Electronic fabric with incorporated chip and interconnect | Christopher J. Jezewski, Brian S. Doyle | 2017-08-15 |
| 9704981 | Techniques for forming contacts to quantum well transistors | Benjamin Chu-Kung, Mantu K. Hudait, Marko Radosavljevic, Jack T. Kavalieros, Willy Rachmady +2 more | 2017-07-11 |
| 9698265 | Strained channel region transistors employing source and drain stressors and systems including the same | Van H. Le, Harold W. Kennel, Willy Rachmady, Jack T. Kavalieros, Niloy Mukherjee | 2017-07-04 |
| 9691848 | Semiconductor devices with germanium-rich active layers and doped transition layers | Willy Rachmady, Van H. Le, Jessica S. Kachian, Marc C. French, Aaron A. Budrevich | 2017-06-27 |
| 9691857 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2017-06-27 |
| 9685508 | High voltage field effect transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more | 2017-06-20 |
| 9685381 | Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon | Niti Goel, Willy Rachmady, Jack T. Kavalieros, Gilbert Dewey, Benjamin Chu-Kung +4 more | 2017-06-20 |
| 9666708 | III-N transistors with enhanced breakdown voltage | Han Wui Then, Benjamin Chu-Kung, Sansaptak Dasgupta, Robert S. Chau, Seung Hoon Sung +1 more | 2017-05-30 |
| 9666492 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros, Willy Rachmady +4 more | 2017-05-30 |
| 9666583 | Methods of containing defects for non-silicon device engineering | Niti Goel, Niloy Mukherjee, Robert S. Chau, Willy Rachmady, Matthew V. Metz +6 more | 2017-05-30 |
| 9660085 | Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof | Han Wui Then, Robert S. Chau, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung +2 more | 2017-05-23 |
| 9653680 | Techniques for filament localization, edge effect reduction, and forming/switching voltage reduction in RRAM devices | Prashant Majhi, Uday Shah, Niloy Mukherjee, Elijah V. Karpov, Brian S. Doyle +1 more | 2017-05-16 |
| 9653548 | Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack | Gilbert Dewey, Marko Radosavljevic, Benjamin Chu-Kung, Niloy Mukherjee | 2017-05-16 |