| 9818870 |
Transistor structure with variable clad/core dimension for stress and bandgap |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +4 more |
2017-11-14 |
$11,178,000 |
| 9812574 |
Techniques and configurations for stacking transistors of an integrated circuit device |
Ravi Pillarisetty, Charles C. Kuo, Han Wui Then, Gilbert Dewey, Willy Rachmady +3 more |
2017-11-07 |
$13,901,000 |
| 9799759 |
Techniques for forming non-planar germanium quantum well devices |
Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung +4 more |
2017-10-24 |
$10,797,000 |
| 9768269 |
Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same |
Gilbert Dewey, Matthew V. Metz, Jack T. Kavalieros, Nancy Zelick, Robert S. Chau |
2017-09-19 |
$8,005,000 |
| 9755062 |
III-N material structure for gate-recessed transistors |
Han Wui Then, Marko Radosavljevic, Uday Shah, Ravi Pillarisetty, Benjamin Chu-Kung +2 more |
2017-09-05 |
$9,844,000 |
| 9748338 |
Preventing isolation leakage in III-V devices |
Gilbert Dewey, Marko Radosavljevic, Ravi Pillarisetty, Benjamin Chu-Kung |
2017-08-29 |
$8,286,000 |
| 9748371 |
Transition metal dichalcogenide semiconductor assemblies |
Marko Radosavljevic, Brian S. Doyle, Ravi Pillarisetty, Sansaptak Dasgupta, Han Wui Then +1 more |
2017-08-29 |
$8,286,000 |
| 9711591 |
Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby |
Matthew V. Metz, James M. Powers, Van H. Le, Benjamin Chu-Kung, Mark R. Lemay +6 more |
2017-07-18 |
$6,909,000 |
| 9704981 |
Techniques for forming contacts to quantum well transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Mantu K. Hudait, Marko Radosavljevic, Jack T. Kavalieros +2 more |
2017-07-11 |
$8,311,000 |
| 9698265 |
Strained channel region transistors employing source and drain stressors and systems including the same |
Van H. Le, Harold W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros |
2017-07-04 |
|
| 9698013 |
Methods and structures to prevent sidewall defects during selective epitaxy |
Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz, Sansaptak Dasgupta +6 more |
2017-07-04 |
|
| 9691857 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2017-06-27 |
$7,334,000 |
| 9685381 |
Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon |
Niti Goel, Ravi Pillarisetty, Willy Rachmady, Jack T. Kavalieros, Gilbert Dewey +4 more |
2017-06-20 |
$9,273,000 |
| 9685508 |
High voltage field effect transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2017-06-20 |
$9,273,000 |
| 9684682 |
Sharding of in-memory objects across NUMA nodes |
Amit Ganesh, Vineet Marwah |
2017-06-20 |
$129,509,000 |
| 9666583 |
Methods of containing defects for non-silicon device engineering |
Niti Goel, Ravi Pillarisetty, Robert S. Chau, Willy Rachmady, Matthew V. Metz +6 more |
2017-05-30 |
$12,187,000 |
| 9666492 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture |
Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Jack T. Kavalieros, Willy Rachmady +4 more |
2017-05-30 |
$12,187,000 |
| 9653548 |
Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack |
Gilbert Dewey, Marko Radosavljevic, Ravi Pillarisetty, Benjamin Chu-Kung |
2017-05-16 |
$8,597,000 |
| 9653680 |
Techniques for filament localization, edge effect reduction, and forming/switching voltage reduction in RRAM devices |
Ravi Pillarisetty, Prashant Majhi, Uday Shah, Elijah V. Karpov, Brian S. Doyle +1 more |
2017-05-16 |
$8,597,000 |
| 9653559 |
Methods to enhance doping concentration in near-surface layers of semiconductors and methods of making same |
Gilbert Dewey, Marko Radosavljevic, Niti Goel, Sanaz Kabehie, Matthew V. Metz +1 more |
2017-05-16 |
$8,597,000 |
| 9645928 |
Distributed directory service for in-memory compression unit home location |
Amit Ganesh, Vineet Marwah |
2017-05-09 |
$37,470,000 |
| 9640537 |
Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy |
Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more |
2017-05-02 |
$12,076,000 |
| 9640671 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more |
2017-05-02 |
$12,076,000 |
| 9640622 |
Selective epitaxially grown III-V materials based devices |
Niti Goel, Gilbert Dewey, Matthew V. Metz, Marko Radosavljevic, Benjamin Chu-Kung +2 more |
2017-05-02 |
$12,076,000 |
| 9634007 |
Trench confined epitaxially grown device layer(s) |
Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta +7 more |
2017-04-25 |
$8,972,000 |
