Issued Patents 2017
Showing 26–50 of 58 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9704981 | Techniques for forming contacts to quantum well transistors | Ravi Pillarisetty, Benjamin Chu-Kung, Mantu K. Hudait, Marko Radosavljevic, Jack T. Kavalieros +2 more | 2017-07-11 |
| 9698013 | Methods and structures to prevent sidewall defects during selective epitaxy | Niloy Mukherjee, Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz +6 more | 2017-07-04 |
| 9691856 | Extreme high mobility CMOS logic | Suman Datta, Mantu K. Hudait, Mark L. Doczy, Jack T. Kavalieros, Amlan Majumdar +3 more | 2017-06-27 |
| 9691857 | Group III-N nanowire transistors | Han Wui Then, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2017-06-27 |
| 9685508 | High voltage field effect transistors | Han Wui Then, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros, Matthew V. Metz +3 more | 2017-06-20 |
| 9685381 | Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon | Niti Goel, Ravi Pillarisetty, Willy Rachmady, Jack T. Kavalieros, Gilbert Dewey +4 more | 2017-06-20 |
| 9673045 | Integration of III-V devices on Si wafers | Sansaptak Dasgupta, Han Wui Then, Seung Hoon Sung, Sanaz K. Gardner, Marko Radosavljevic +1 more | 2017-06-06 |
| 9666492 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more | 2017-05-30 |
| 9666708 | III-N transistors with enhanced breakdown voltage | Han Wui Then, Benjamin Chu-Kung, Sansaptak Dasgupta, Seung Hoon Sung, Ravi Pillarisetty +1 more | 2017-05-30 |
| 9666583 | Methods of containing defects for non-silicon device engineering | Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Willy Rachmady, Matthew V. Metz +6 more | 2017-05-30 |
| 9660067 | III-N transistors with epitaxial layers providing steep subthreshold swing | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic | 2017-05-23 |
| 9660085 | Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof | Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Benjamin Chu-Kung, Seung Hoon Sung +2 more | 2017-05-23 |
| 9660064 | Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stack | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Sanaz K. Gardner, Seung Hoon Sung +1 more | 2017-05-23 |
| 9653559 | Methods to enhance doping concentration in near-surface layers of semiconductors and methods of making same | Niloy Mukherjee, Gilbert Dewey, Marko Radosavljevic, Niti Goel, Sanaz Kabehie +1 more | 2017-05-16 |
| 9653680 | Techniques for filament localization, edge effect reduction, and forming/switching voltage reduction in RRAM devices | Ravi Pillarisetty, Prashant Majhi, Uday Shah, Niloy Mukherjee, Elijah V. Karpov +1 more | 2017-05-16 |
| 9647208 | Low voltage embedded memory having conductive oxide and electrode stacks | Elijah V. Karpov, Brian S. Doyle, Charles C. Kuo, Eric R. Dickey, Michael Stephen Bowen +1 more | 2017-05-09 |
| 9640622 | Selective epitaxially grown III-V materials based devices | Niti Goel, Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Marko Radosavljevic +2 more | 2017-05-02 |
| 9640634 | Field effect transistor structure with abrupt source/drain junctions | Anand S. Murthy, Patrick Morrow, Chia-Hong Jan, Paul Packan | 2017-05-02 |
| 9640537 | Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy | Niti Goel, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz, Niloy Mukherjee +7 more | 2017-05-02 |
| 9640422 | III-N devices in Si trenches | Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Seung Hoon Sung, Marko Radosavljevic +3 more | 2017-05-02 |
| 9634007 | Trench confined epitaxially grown device layer(s) | Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta +7 more | 2017-04-25 |
| 9614083 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Suman Datta, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2017-04-04 |
| 9608055 | Semiconductor device having germanium active layer with underlying diffusion barrier layer | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jack T. Kavalieros, Harold W. Kennel | 2017-03-28 |
| 9590089 | Variable gate width for gate all-around transistors | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Jack T. Kavalieros, Seung Hoon Sung | 2017-03-07 |
| 9590069 | Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation | Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Niti Goel +3 more | 2017-03-07 |