Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Strained channel region transistors employing source and drain stressors and systems including the same

Strained channel region transistors employing source and drain stressors and systems including the same

US Patent 9698265 · Granted Jul 4, 2017

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nanowire transistor fabrication with hardmask layers2025
Nanowire transistor fabrication with hardmask layers2025
Double-sided integrated circuit transistor structures with depopulated bottom ch2025
Dielectric sidewall features for tuning thin film transistor (TFT) parasitics2025
Punch-through interconnect feature to couple upper electrodes of capacitors of m2025
Trench-based quantum dot devices with conductive liners2025
Integrating embedded memory with logic interconnects2025
Method of forming capacitors through wafer bonding2025
Smooth titanium nitride layers and methods of forming the same2025
Method of integrating a capacitor including a non-linear polar material with a t2025
Gate coupled non-linear polar material based capacitors for memory and logic2025
Gate-all-around integrated circuit structures having germanium-diffused nanoribb2025