Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Stress in trigate devices using complimentary gate fill materials

Stress in trigate devices using complimentary gate fill materials

US Patent 9806193 · Granted Oct 31, 2017

Estimated economic value: $13,240,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Nanowire transistor fabrication with hardmask layers2025
Trench-based quantum dot devices with conductive liners2025
Gate-all-around integrated circuit structures having germanium-diffused nanoribb2025
Transistor gate trench engineering to decrease capacitance and resistance2025
Capacitor connections in dielectric layers2025
Formation of gate spacers for strained PMOS gate-all-around transistor structure2025
Ultra pipelined accelerator for machine learning inference2025
Field effect transistors with a gated oxide semiconductor source/drain spacer2025
Transistor structures with a metal oxide contact buffer and a method of fabricat2025
Technologies for radio frequency optimized interconnects for a quantum processor2025
Asymmetric gate structures and contacts for stacked transistors2025
Quantum dot devices with magnetic gates2025