Issued Patents 2017
Showing 126–150 of 370 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9741626 | Vertical transistor with uniform bottom spacer formed by selective oxidation | Nicolas Loubet, Xin Miao, Alexander Reznicek | 2017-08-22 |
| 9741609 | Middle of line cobalt interconnection | Lawrence A. Clevenger, Balasubramanian S. Pranatharthi Haran, John H. Zhang | 2017-08-22 |
| 9735253 | Closely packed vertical transistors with reduced contact resistance | Zhenxing Bi, Juntao Li, Peng Xu | 2017-08-15 |
| 9735257 | finFET having highly doped source and drain regions | Ali Khakifirooz, Alexander Reznicek, Dominic J. Schepis | 2017-08-15 |
| 9735269 | Integrated strained stacked nanosheet FET | Ramachandra Divakaruni, Juntao Li, Xin Miao | 2017-08-15 |
| 9735246 | Air-gap top spacer and self-aligned metal gate for vertical fets | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2017-08-15 |
| 9735173 | Reduced parasitic capacitance and contact resistance in extremely thin silicon-on-insulator (ETSOI) devices due to wrap-around structure of source/drain regions | Ramachandra Divakaruni | 2017-08-15 |
| 9735176 | Stacked nanowires with multi-threshold voltage solution for PFETS | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2017-08-15 |
| 9735272 | Method to controllably etch silicon recess for ultra shallow junctions | Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2017-08-15 |
| 9735234 | Stacked nanowire devices | Ramachandra Divakaruni, Juntao Li | 2017-08-15 |
| 9733210 | Nanofluid sensor with real-time spatial sensing | Ali Khakifirooz, Ghavam G. Shahidi, Davood Shahrjerdi | 2017-08-15 |
| 9735155 | Bulk silicon germanium FinFET | Juntao Li, Shogo Mochizuki | 2017-08-15 |
| 9735160 | Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2017-08-15 |
| 9735277 | Partially dielectric isolated fin-shaped field effect transistor (FinFET) | Ramachandra Divakaruni, Johnathan E. Faltermeier, Edward J. Nowak, Kern Rim | 2017-08-15 |
| 9735162 | Dynamic random access memory cell with self-aligned strap | John E. Barth, Jr., Herbert L. Ho, Ali Khakifirooz, Ravikumar Ramachandran, Kern Rim +1 more | 2017-08-15 |
| 9728649 | Semiconductor device including embedded crystalline back-gate bias planes, related design structure and method of fabrication | Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek, Raghavasimhan Sreenivasan | 2017-08-08 |
| 9728626 | Almost defect-free active channel region | Dominic J. Schepis, Charan V. Surisetty, Alexander Reznicek | 2017-08-08 |
| 9728635 | Uniform gate length in vertical field effect transistors | Peng Xu | 2017-08-08 |
| 9728621 | iFinFET | Juntao Li, Geng Wang, Qintao Zhang | 2017-08-08 |
| 9728622 | Dummy gate formation using spacer pull down hardmask | Marc A. Bergendahl, Fee Li Lie, Eric R. Miller, John R. Sporre, Sean Teehan | 2017-08-08 |
| 9728625 | Fin formation in fin field effect transistors | Bruce B. Doris, Hong He, Ali Khakifirooz, Yunpeng Yin | 2017-08-08 |
| 9721845 | Vertical field effect transistors with bottom contact metal directly beneath fins | Xin Miao, Wenyu Xu, Chen Zhang | 2017-08-01 |
| 9722052 | Fin cut without residual fin defects | Pouya Hashemi, Alexander Reznicek, Dominic J. Schepis | 2017-08-01 |
| 9722125 | Radiation sensor, method of forming the sensor and device including the sensor | Xin Miao, Wenyu Xu, Chen Zhang | 2017-08-01 |
| 9722048 | Vertical transistors with reduced bottom electrode series resistance | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2017-08-01 |