Issued Patents 2017
Showing 176–200 of 370 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9704753 | Minimizing shorting between FinFET epitaxial regions | Balasubramanian Pranatharthiharan, Alexander Reznicek, Charan V. Surisetty | 2017-07-11 |
| 9698212 | Three-dimensional metal resistor formation | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2017-07-04 |
| 9698266 | Semiconductor device strain relaxation buffer layer | Xin Miao, Wenyu Xu, Chen Zhang | 2017-07-04 |
| 9698251 | Fin reveal last for finfet | Xin Miao, Wenyu Xu, Chen Zhang | 2017-07-04 |
| 9698245 | Vertical transistor with air-gap spacer | Tak H. Ning | 2017-07-04 |
| 9698215 | MIM capacitor formation in RMG module | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2017-07-04 |
| 9698230 | MOSFET with asymmetric self-aligned contact | Xin Miao, Ruilong Xie, Tenko Yamashita | 2017-07-04 |
| 9698145 | Implementation of long-channel thick-oxide devices in vertical transistor flow | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2017-07-04 |
| 9691882 | Carbon-doped cap for a raised active semiconductor region | Zhengwen Li, Qing Cao, Fei Liu, Zhen Zhang | 2017-06-27 |
| 9691765 | Fin type field effect transistors with different pitches and substantially uniform fin reveal | Zhenxing Bi, Thamarai S. Devarajan, Balasubramanian Pranatharthiharan | 2017-06-27 |
| 9691850 | Vertical transistor with air-gap spacer | Tak H. Ning | 2017-06-27 |
| 9691854 | Semiconductor device including multiple fin heights | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2017-06-27 |
| 9691877 | Replacement metal gate structures | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2017-06-27 |
| 9691900 | Dual epitaxy CMOS processing using selective nitride formation for reduced gate pitch | Ali Khakifirooz, Richard S. Wise | 2017-06-27 |
| 9685409 | Top metal contact for vertical transistor structures | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2017-06-20 |
| 9685611 | Multi-faced component-based electromechanical device | Qing Cao, Zhengwen Li, Fei Liu | 2017-06-20 |
| 9685539 | Nanowire isolation scheme to reduce parasitic capacitance | Bruce B. Doris, Junli Wang | 2017-06-20 |
| 9685537 | Gate length control for vertical transistors and integration with replacement gate flow | Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh | 2017-06-20 |
| 9685535 | Conductive contacts in semiconductor on insulator substrate | Rama Divakaruni | 2017-06-20 |
| 9685532 | Replacement metal gate structures | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2017-06-20 |
| 9685510 | SiGe CMOS with tensely strained NFET and compressively strained PFET | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2017-06-20 |
| 9685507 | FinFET devices | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2017-06-20 |
| 9685499 | Nanosheet capacitor | Zhenxing Bi, Dongbing Shao, Zheng Xu | 2017-06-20 |
| 9685440 | Forming fins utilizing alternating pattern of spacers | Peng Xu | 2017-06-20 |
| 9685434 | Inter-level dielectric layer in replacement metal gates and resistor fabrication | Ali Khakifirooz, Alexander Reznicek, Charan V. Surisetty | 2017-06-20 |