Issued Patents 2017
Showing 25 most recent of 29 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9853028 | Vertical FET with reduced parasitic capacitance | Kangguo Cheng, Xin Miao, Philip J. Oldiges, Wenyu Xu | 2017-12-26 |
| 9842914 | Nanosheet FET with wrap-around inner spacer | Chun Wing Yeung | 2017-12-12 |
| 9837409 | Integration of vertical transistors with 3D long channel transistors | Kangguo Cheng, Xin Miao, Wenyu Xu | 2017-12-05 |
| 9807385 | Simplification of mode dependent intra smoothing | Guichun Li, Lingzhi Liu, Nam Ling, Jianhua Zheng, Li Song | 2017-10-31 |
| 9799655 | Flipped vertical field-effect-transistor | Kangguo Cheng, Xin Miao, Wenyu Xu | 2017-10-24 |
| 9793349 | Vertical single electron transistor formed by condensation | Kangguo Cheng, Xin Miao, Wenyu Xu | 2017-10-17 |
| 9768085 | Top contact resistance measurement in vertical FETs | Kangguo Cheng, Zuoguang Liu, Xin Miao, Wenyu Xu | 2017-09-19 |
| 9761728 | Self-aligned source/drain junction for vertical field-effect transistor (FET) and method of forming the same | Kangguo Cheng, Xin Miao, Wenyu Xu | 2017-09-12 |
| 9762914 | Method and apparatus of derivation for a binary partition pattern | Zhouye Gu, Jianhua Zheng, Nam Ling | 2017-09-12 |
| 9761694 | Vertical FET with selective atomic layer deposition gate | Kangguo Cheng, Xin Miao, Wenyu Xu | 2017-09-12 |
| 9748381 | Pillar formation for heat dissipation and isolation in vertical field effect transistors | Zhenxing Bi, Kangguo Cheng, Peng Xu | 2017-08-29 |
| 9741717 | FinFETs with controllable and adjustable channel doping | Kangguo Cheng, Xin Miao, Wenyu Xu | 2017-08-22 |
| 9721845 | Vertical field effect transistors with bottom contact metal directly beneath fins | Kangguo Cheng, Xin Miao, Wenyu Xu | 2017-08-01 |
| 9721897 | Transistor with air spacer and self-aligned contact | Kangguo Cheng, Xin Miao, Peng Xu | 2017-08-01 |
| 9722125 | Radiation sensor, method of forming the sensor and device including the sensor | Kangguo Cheng, Xin Miao, Wenyu Xu | 2017-08-01 |
| 9704994 | Different shallow trench isolation fill in fin and non-fin regions of finFET | Kangguo Cheng, Peng Xu | 2017-07-11 |
| 9699462 | System and method for estimating view synthesis distortion | Zhouye Gu, Jianhua Zheng, Nam Ling | 2017-07-04 |
| 9698266 | Semiconductor device strain relaxation buffer layer | Kangguo Cheng, Xin Miao, Wenyu Xu | 2017-07-04 |
| 9698251 | Fin reveal last for finfet | Kangguo Cheng, Xin Miao, Wenyu Xu | 2017-07-04 |
| 9653458 | Integrated device with P-I-N diodes and vertical field effect transistors | Kangguo Cheng, Xin Miao, Wenyu Xu | 2017-05-16 |
| 9653602 | Tensile and compressive fins for vertical field effect transistors | Kangguo Cheng, Xin Miao, Wenyu Xu | 2017-05-16 |
| 9641853 | Method and apparatus of depth prediction mode selection | Jianhua Zheng, Zhouye Gu, Nam Ling | 2017-05-02 |
| 9607899 | Integration of vertical transistors with 3D long channel transistors | Kangguo Cheng, Xin Miao, Wenyu Xu | 2017-03-28 |
| 9602839 | Mode dependent intra smoothing filter table mapping methods for non-square prediction units | Guichun Li, Lingzhi Liu, Changcai Lai, Nam Ling, Jianhua Zheng | 2017-03-21 |
| 9595605 | Vertical single electron transistor formed by condensation | Kangguo Cheng, Xin Miao, Wenyu Xu | 2017-03-14 |