| 9853028 |
Vertical FET with reduced parasitic capacitance |
Kangguo Cheng, Xin Miao, Philip J. Oldiges, Wenyu Xu |
2017-12-26 |
$2,704,000 |
| 9842914 |
Nanosheet FET with wrap-around inner spacer |
Chun Wing Yeung |
2017-12-12 |
$7,756,000 |
| 9837409 |
Integration of vertical transistors with 3D long channel transistors |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2017-12-05 |
$3,039,000 |
| 9807385 |
Simplification of mode dependent intra smoothing |
Guichun Li, Lingzhi Liu, Nam Ling, Jianhua Zheng, Li Song |
2017-10-31 |
|
| 9799655 |
Flipped vertical field-effect-transistor |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2017-10-24 |
$3,030,000 |
| 9793349 |
Vertical single electron transistor formed by condensation |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2017-10-17 |
$4,096,000 |
| 9768085 |
Top contact resistance measurement in vertical FETs |
Kangguo Cheng, Zuoguang Liu, Xin Miao, Wenyu Xu |
2017-09-19 |
$2,669,000 |
| 9761728 |
Self-aligned source/drain junction for vertical field-effect transistor (FET) and method of forming the same |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2017-09-12 |
$1,776,000 |
| 9762914 |
Method and apparatus of derivation for a binary partition pattern |
Zhouye Gu, Jianhua Zheng, Nam Ling |
2017-09-12 |
|
| 9761694 |
Vertical FET with selective atomic layer deposition gate |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2017-09-12 |
$1,776,000 |
| 9748381 |
Pillar formation for heat dissipation and isolation in vertical field effect transistors |
Zhenxing Bi, Kangguo Cheng, Peng Xu |
2017-08-29 |
$2,195,000 |
| 9741717 |
FinFETs with controllable and adjustable channel doping |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2017-08-22 |
$2,056,000 |
| 9721845 |
Vertical field effect transistors with bottom contact metal directly beneath fins |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2017-08-01 |
$1,638,000 |
| 9721897 |
Transistor with air spacer and self-aligned contact |
Kangguo Cheng, Xin Miao, Peng Xu |
2017-08-01 |
$1,638,000 |
| 9722125 |
Radiation sensor, method of forming the sensor and device including the sensor |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2017-08-01 |
$1,638,000 |
| 9704994 |
Different shallow trench isolation fill in fin and non-fin regions of finFET |
Kangguo Cheng, Peng Xu |
2017-07-11 |
$1,748,000 |
| 9699462 |
System and method for estimating view synthesis distortion |
Zhouye Gu, Jianhua Zheng, Nam Ling |
2017-07-04 |
|
| 9698266 |
Semiconductor device strain relaxation buffer layer |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2017-07-04 |
|
| 9698251 |
Fin reveal last for finfet |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2017-07-04 |
|
| 9653458 |
Integrated device with P-I-N diodes and vertical field effect transistors |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2017-05-16 |
$2,370,000 |
| 9653602 |
Tensile and compressive fins for vertical field effect transistors |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2017-05-16 |
$2,370,000 |
| 9641853 |
Method and apparatus of depth prediction mode selection |
Jianhua Zheng, Zhouye Gu, Nam Ling |
2017-05-02 |
|
| 9607899 |
Integration of vertical transistors with 3D long channel transistors |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2017-03-28 |
$2,520,000 |
| 9602839 |
Mode dependent intra smoothing filter table mapping methods for non-square prediction units |
Guichun Li, Lingzhi Liu, Changcai Lai, Nam Ling, Jianhua Zheng |
2017-03-21 |
|
| 9595605 |
Vertical single electron transistor formed by condensation |
Kangguo Cheng, Xin Miao, Wenyu Xu |
2017-03-14 |
$3,628,000 |
