Issued Patents 2017
Showing 25 most recent of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9853132 | Nanosheet MOSFET with full-height air-gap spacer | Kangguo Cheng, Bruce B. Doris, Michael A. Guillorn | 2017-12-26 |
| 9853054 | Extremely thin silicon-on-insulator silicon germanium device without edge strain relaxation | Kangguo Cheng, Juntao Li, Zuoguang Liu | 2017-12-26 |
| 9853028 | Vertical FET with reduced parasitic capacitance | Kangguo Cheng, Philip J. Oldiges, Wenyu Xu, Chen Zhang | 2017-12-26 |
| 9847388 | High thermal budget compatible punch through stop integration using doped glass | Kangguo Cheng, Sanjay C. Mehta, Chun-Chen Yeh | 2017-12-19 |
| 9842929 | Strained silicon complementary metal oxide semiconductor including a silicon containing tensile N-type fin field effect transistor and silicon containing compressive P-type fin field effect transistor formed using a dual relaxed substrate | Kangguo Cheng, Nicolas Loubet, Alexander Reznicek | 2017-12-12 |
| 9837409 | Integration of vertical transistors with 3D long channel transistors | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-12-05 |
| 9824934 | Shallow trench isolation recess process flow for vertical field effect transistor fabrication | Zhenxing Bi, Kangguo Cheng, Bruce Miao | 2017-11-21 |
| 9818823 | Stacked nanowire device width adjustment by gas cluster ion beam (GCIB) | Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2017-11-14 |
| 9812321 | Method for making nanosheet CMOS device integrating atomic layer deposition process and replacement gate structure | Bruce B. Doris, Michael A. Guillorn, Isaac Lauer | 2017-11-07 |
| 9806155 | Split fin field effect transistor enabling back bias on fin type field effect transistors | Veeraraghavan S. Basker, Zuoguang Liu, Tenko Yamashita | 2017-10-31 |
| 9799655 | Flipped vertical field-effect-transistor | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-10-24 |
| 9799749 | Vertical transport FET devices with uniform bottom spacer | Zhenxing Bi, Kangguo Cheng, Juntao Li | 2017-10-24 |
| 9793349 | Vertical single electron transistor formed by condensation | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-10-17 |
| 9786737 | FinFET with reduced parasitic capacitance | Kangguo Cheng, Darsen D. Lu, Tenko Yamashita | 2017-10-10 |
| 9768085 | Top contact resistance measurement in vertical FETs | Kangguo Cheng, Zuoguang Liu, Wenyu Xu, Chen Zhang | 2017-09-19 |
| 9761694 | Vertical FET with selective atomic layer deposition gate | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-09-12 |
| 9761728 | Self-aligned source/drain junction for vertical field-effect transistor (FET) and method of forming the same | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-09-12 |
| 9748404 | Method for fabricating a semiconductor device including gate-to-bulk substrate isolation | Josephine B. Chang, Michael A. Guillorn, Isaac Lauer | 2017-08-29 |
| 9741717 | FinFETs with controllable and adjustable channel doping | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-08-22 |
| 9741626 | Vertical transistor with uniform bottom spacer formed by selective oxidation | Kangguo Cheng, Nicolas Loubet, Alexander Reznicek | 2017-08-22 |
| 9735269 | Integrated strained stacked nanosheet FET | Kangguo Cheng, Ramachandra Divakaruni, Juntao Li | 2017-08-15 |
| 9722125 | Radiation sensor, method of forming the sensor and device including the sensor | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-08-01 |
| 9721897 | Transistor with air spacer and self-aligned contact | Kangguo Cheng, Peng Xu, Chen Zhang | 2017-08-01 |
| 9721845 | Vertical field effect transistors with bottom contact metal directly beneath fins | Kangguo Cheng, Wenyu Xu, Chen Zhang | 2017-08-01 |
| 9716086 | Method and structure for forming buried ESD with FinFETs | Kangguo Cheng, Nicolas Loubet, Alexander Reznicek | 2017-07-25 |