Issued Patents 2017
Showing 25 most recent of 86 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9853022 | MIM capacitor formation in RMG module | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-12-26 |
| 9853158 | Method and structure for multigate FinFet device epi-extension junction control by hydrogen treatment | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2017-12-26 |
| 9853159 | Self aligned epitaxial based punch through control | Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2017-12-26 |
| 9818741 | Structure and method to prevent EPI short between trenches in FINFET eDRAM | Michael V. Aquilino, Kangguo Cheng, Gregory Costrini, Ali Khakifirooz, Byeong Y. Kim +5 more | 2017-11-14 |
| 9818877 | Embedded source/drain structure for tall finFET and method of formation | Kangguo Cheng, Ali Khakifirooz, Henry K. Utomo, Reinaldo Vega | 2017-11-14 |
| 9812567 | Precise control of vertical transistor gate length | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-11-07 |
| 9812400 | Contact line having insulating spacer therein and method of forming same | Keith H. Tabakman, Patrick Carpenter, Guillaume Bouche, Michael V. Aquilino | 2017-11-07 |
| 9805987 | Self-aligned punch through stopper liner for bulk FinFET | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-10-31 |
| 9806155 | Split fin field effect transistor enabling back bias on fin type field effect transistors | Zuoguang Liu, Xin Miao, Tenko Yamashita | 2017-10-31 |
| 9805973 | Dual silicide liner flow for enabling low contact resistance | Praneet Adusumilli, Zuoguang Liu, Tenko Yamashita, Chun-Chen Yeh | 2017-10-31 |
| 9799513 | Localized elastic strain relaxed buffer | Oleg Gluschenkov, Shogo Mochizuki, Alexander Reznicek | 2017-10-24 |
| 9799754 | Contact structure and extension formation for III-V nFET | Alexander Reznicek | 2017-10-24 |
| 9793274 | CMOS transistors including gate spacers of the same thickness | Kangguo Cheng, Ali Khakifirooz | 2017-10-17 |
| 9793175 | FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-10-17 |
| 9793379 | FinFET spacer without substrate gouging or spacer foot | Kangguo Cheng, Ali Khakifirooz, Raghavasimhan Sreenivasan | 2017-10-17 |
| 9793160 | Aggressive tip-to-tip scaling using subtractive integraton | Wilfried Haensch | 2017-10-17 |
| 9793161 | Methods for contact formation for 10 nanometers and beyond with minimal mask counts | — | 2017-10-17 |
| 9786563 | Fin pitch scaling for high voltage devices and low voltage devices on the same wafer | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-10-10 |
| 9780091 | Fin pitch scaling for high voltage devices and low voltage devices on the same wafer | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-10-03 |
| 9780094 | Trench to trench fin short mitigation | Alexander Reznicek | 2017-10-03 |
| 9773783 | Forming metal-insulator-metal capacitor | Kangguo Cheng | 2017-09-26 |
| 9768077 | Low resistance dual liner contacts for Fin Field-Effect Transistors (FinFETs) | Praneet Adusumilli, Zuoguang Liu | 2017-09-19 |
| 9761500 | FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-09-12 |
| 9761496 | Field effect transistor contacts | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-09-12 |
| 9735246 | Air-gap top spacer and self-aligned metal gate for vertical fets | Kangguo Cheng, Theodorus E. Standaert, Junli Wang | 2017-08-15 |