RV

Reinaldo Vega

IBM: 15 patents #240 of 10,852Top 3%
Globalfoundries: 3 patents #173 of 1,311Top 15%
Overall (2017): #1,960 of 506,227Top 1%
18
Patents 2017

Issued Patents 2017

Patent #TitleCo-InventorsDate
9818054 Tag with tunable retro-reflectors Evan G. Colgan, Fuad E. Doany, Li-Wen Hung, Bucknell C. Webb 2017-11-14
9818877 Embedded source/drain structure for tall finFET and method of formation Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz, Henry K. Utomo 2017-11-14
9818741 Structure and method to prevent EPI short between trenches in FINFET eDRAM Michael V. Aquilino, Veeraraghavan S. Basker, Kangguo Cheng, Gregory Costrini, Ali Khakifirooz +5 more 2017-11-14
9761727 Vertical FETs with variable bottom spacer recess Hari V. Mallela, Rajasekhar Venigalla 2017-09-12
9741722 Dummy gate structure for electrical isolation of a fin DRAM John E. Barth, Jr., Kangguo Cheng, Bruce B. Doris, Herbert L. Ho, Ali Khakifirooz +4 more 2017-08-22
9735275 Channel replacement and bimodal doping scheme for bulk finFET threshold voltage modulation with reduced performance penalty Gauri Karve, Robert R. Robison 2017-08-15
9735162 Dynamic random access memory cell with self-aligned strap John E. Barth, Jr., Kangguo Cheng, Herbert L. Ho, Ali Khakifirooz, Ravikumar Ramachandran +1 more 2017-08-15
9728466 Vertical field effect transistors with metallic source/drain regions Hari V. Mallela, Robert R. Robison, Rajasekhar Venigalla 2017-08-08
9680019 Fin-type field-effect transistors with strained channels Henry K. Utomo, Yun-Yu Wang 2017-06-13
9679993 Fin end spacer for preventing merger of raised active regions Emre Alptekin, Sameer H. Jain, Viraj Y. Sardesai, Cung D. Tran 2017-06-13
9647124 Semiconductor devices with graphene nanoribbons Emre Alptekin, Viraj Y. Sardesai 2017-05-09
9601491 Vertical field effect transistors having epitaxial fin channel with spacers below gate structure Hari V. Mallela, Rajasekhar Venigalla 2017-03-21
9601380 Fin end spacer for preventing merger of raised active regions Emre Alptekin, Sameer H. Jain, Viraj Y. Sardesai, Cung D. Tran 2017-03-21
9595527 Coaxial carbon nanotube capacitor for eDRAM — 2017-03-14
9577068 Protection of semiconductor-oxide-containing gate dielectric during replacement gate formation Gregory Costrini, Ravikumar Ramachandran, Richard S. Wise 2017-02-21
9564443 Dynamic random access memory cell with self-aligned strap John E. Barth, Jr., Kangguo Cheng, Herbert L. Ho, Ali Khakifirooz, Ravikumar Ramachandran +1 more 2017-02-07
9564445 Dummy gate structure for electrical isolation of a fin DRAM John E. Barth, Jr., Kangguo Cheng, Bruce B. Doris, Herbert L. Ho, Ali Khakifirooz +4 more 2017-02-07
9536900 Forming fins of different semiconductor materials on the same substrate Ravikumar Ramachandran, Huiling Shang, Keith H. Tabakman, Henry K. Utomo 2017-01-03