| 9818873 |
Forming stressed epitaxial layers between gates separated by different pitches |
Emre Alptekin, Lars Liebmann, Injo Ok, Balasubramanian Pranatharthiharan, Soon-Cheon Seo +2 more |
2017-11-14 |
| 9818741 |
Structure and method to prevent EPI short between trenches in FINFET eDRAM |
Michael V. Aquilino, Veeraraghavan S. Basker, Kangguo Cheng, Gregory Costrini, Ali Khakifirooz +5 more |
2017-11-14 |
| 9735162 |
Dynamic random access memory cell with self-aligned strap |
John E. Barth, Jr., Kangguo Cheng, Herbert L. Ho, Ali Khakifirooz, Kern Rim +1 more |
2017-08-15 |
| 9577068 |
Protection of semiconductor-oxide-containing gate dielectric during replacement gate formation |
Gregory Costrini, Reinaldo Vega, Richard S. Wise |
2017-02-21 |
| 9564443 |
Dynamic random access memory cell with self-aligned strap |
John E. Barth, Jr., Kangguo Cheng, Herbert L. Ho, Ali Khakifirooz, Kern Rim +1 more |
2017-02-07 |
| 9548244 |
Self-aligned contact structure |
Rosa A. Orozco-Teran, John A. Fitzsimmons, Russell H. Arndt, David L. Rath |
2017-01-17 |
| 9536900 |
Forming fins of different semiconductor materials on the same substrate |
Huiling Shang, Keith H. Tabakman, Henry K. Utomo, Reinaldo Vega |
2017-01-03 |
