| 9842741 |
Removal of semiconductor growth defects |
Linus Jang |
2017-12-12 |
| 9837440 |
FinFET device with abrupt junctions |
Kangguo Cheng, Hong He, Ali Khakifirooz, Alexander Reznicek |
2017-12-05 |
| 9825174 |
FinFET with dielectric isolated channel |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2017-11-21 |
| 9818873 |
Forming stressed epitaxial layers between gates separated by different pitches |
Emre Alptekin, Lars Liebmann, Injo Ok, Balasubramanian Pranatharthiharan, Ravikumar Ramachandran +2 more |
2017-11-14 |
| 9806078 |
FinFET spacer formation on gate sidewalls, between the channel and source/drain regions |
Ruilong Xie, Christopher M. Prindle, Tenko Yamashita, Balasubramanian Pranatharthiharan, Pietro Montanini |
2017-10-31 |
| 9799654 |
FET trench dipole formation |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2017-10-24 |
| 9716160 |
Extended contact area using undercut silicide extensions |
Effendi Leobandung, Tenko Yamashita, Chun-Chen Yeh |
2017-07-25 |
| 9704760 |
Integrated circuit (IC) with offset gate sidewall contacts and method of manufacture |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2017-07-11 |
| 9685340 |
Stable contact on one-sided gate tie-down structure |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2017-06-20 |
| 9685384 |
Devices and methods of forming epi for aggressive gate pitch |
Ruilong Xie, Christopher M. Prindle, Balasubramanian Pranatharthiharan, Pietro Montanini, Shogo Mochizuki |
2017-06-20 |
| 9673101 |
Minimize middle-of-line contact line shorts |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2017-06-06 |
| 9653573 |
Replacement metal gate including dielectric gate material |
Linus Jang, Sivananda K. Kanakasabapathy, Sanjay C. Mehta, Raghavasimhan Sreenivasan |
2017-05-16 |
| 9627382 |
CMOS NFET and PFET comparable spacer width |
Kangguo Cheng, Injo Ok |
2017-04-18 |
| 9627497 |
Semiconductor device with trench epitaxy and contact |
— |
2017-04-18 |
| 9620641 |
FinFET with epitaxial source and drain regions and dielectric isolated channel region |
Kangguo Cheng, Ramachandra Divakaruni, Ali Khakifirooz, Alexander Reznicek |
2017-04-11 |
| 9595592 |
Forming dual contact silicide using metal multi-layer and ion beam mixing |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2017-03-14 |
| 9577096 |
Salicide formation on replacement metal gate finFet devices |
Effendi Leobandung, Tenko Yamashita, Chun-Chen Yeh |
2017-02-21 |
| 9576961 |
Semiconductor devices with sidewall spacers of equal thickness |
Kangguo Cheng, Balasubramanian Pranatharthiharan |
2017-02-21 |
| 9564370 |
Effective device formation for advanced technology nodes with aggressive fin-pitch scaling |
Injo Ok, Sanjay C. Mehta, Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2017-02-07 |
| 9553093 |
Spacer for dual epi CMOS devices |
— |
2017-01-24 |
