HU

Henry K. Utomo

Globalfoundries: 6 patents #67 of 1,311Top 6%
IBM: 1 patents #5,570 of 10,852Top 55%
📍 Newburgh, NY: #3 of 29 inventorsTop 15%
🗺 New York: #510 of 12,278 inventorsTop 5%
Overall (2017): #15,838 of 506,227Top 4%
7
Patents 2017

Issued Patents 2017

Showing 1–7 of 7 patents

Patent #TitleCo-InventorsDate
9818877 Embedded source/drain structure for tall finFET and method of formation Veeraraghavan S. Basker, Kangguo Cheng, Ali Khakifirooz, Reinaldo Vega 2017-11-14
9680019 Fin-type field-effect transistors with strained channels Reinaldo Vega, Yun-Yu Wang 2017-06-13
9634084 Conformal buffer layer in source and drain regions of fin-type transistors Christopher D. Sheraw, Chengwen Pei, Eric T. Harley, Yue Ke, Yinxiao Yang +1 more 2017-04-25
9627480 Junction butting structure using nonuniform trench shape Anthony I. Chou, Judson R. Holt, Arvind Kumar 2017-04-18
9577100 FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions Kangguo Cheng, Michael P. Chudzik, Eric C. Harley, Judson R. Holt, Yue Ke +2 more 2017-02-21
9577099 Diamond shaped source drain epitaxy with underlying buffer layer Veeraraghavan S. Basker, Eric C. Harley, Yue Ke, Alexander Reznicek 2017-02-21
9536900 Forming fins of different semiconductor materials on the same substrate Ravikumar Ramachandran, Huiling Shang, Keith H. Tabakman, Reinaldo Vega 2017-01-03