| 9831084 |
Hydroxyl group termination for nucleation of a dielectric metallic oxide |
Takashi Ando, Min Dai, Martin M. Frank, David F. Hilscher, Rishikesh Krishnan +3 more |
2017-11-28 |
| 9793216 |
Fabrication of IC structure with metal plug |
Joyeeta Nag, Jim Shih-Chun Liang, Domingo A. Ferrer Luppi, Atsushi Ogino, Andrew H. Simon |
2017-10-17 |
| 9748354 |
Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof |
Wei V. Tang, Paul F. Ma, Steven C. H. Hung, Siddarth A. Krishnan, Wenyu Zhang +6 more |
2017-08-29 |
| 9679810 |
Integrated circuit having improved electromigration performance and method of forming same |
Joyeeta Nag, Shishir Ray, Andrew H. Simon, Oleg Gluschenkov, Siddarth A. Krishnan |
2017-06-13 |
| 9673108 |
Fabrication of higher-K dielectrics |
Min Dai, Dominic J. Schepis, Shahab Siddiqui |
2017-06-06 |
| 9653534 |
Trench metal-insulator-metal capacitor with oxygen gettering layer |
Takashi Ando, Eduard A. Cartier, Aritra Dasgupta, Herbert L. Ho, Donghun Kang +3 more |
2017-05-16 |
| 9627508 |
Replacement channel TFET |
Siddarth A. Krishnan, Unoh Kwon, Vijay Narayanan, Jeffrey W. Sleight |
2017-04-18 |
| 9577100 |
FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions |
Kangguo Cheng, Eric C. Harley, Judson R. Holt, Yue Ke, Rishikesh Krishnan +2 more |
2017-02-21 |
| 9564505 |
Changing effective work function using ion implantation during dual work function metal gate integration |
Martin M. Frank, Herbert L. Ho, Mark J. Hurley, Rashmi Jha, Naim Moumen +3 more |
2017-02-07 |
| 9536985 |
Epitaxial growth of material on source/drain regions of FinFET structure |
Brian J. Greene, Eric C. Harley, Judson R. Holt, Yue Ke, Rishikesh Krishnan +2 more |
2017-01-03 |
