Issued Patents 2017
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9831084 | Hydroxyl group termination for nucleation of a dielectric metallic oxide | Takashi Ando, Min Dai, Martin M. Frank, David F. Hilscher, Rishikesh Krishnan +3 more | 2017-11-28 |
| 9793216 | Fabrication of IC structure with metal plug | Joyeeta Nag, Jim Shih-Chun Liang, Domingo A. Ferrer Luppi, Atsushi Ogino, Andrew H. Simon | 2017-10-17 |
| 9748354 | Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof | Wei V. Tang, Paul F. Ma, Steven C. H. Hung, Siddarth A. Krishnan, Wenyu Zhang +6 more | 2017-08-29 |
| 9679810 | Integrated circuit having improved electromigration performance and method of forming same | Joyeeta Nag, Shishir Ray, Andrew H. Simon, Oleg Gluschenkov, Siddarth A. Krishnan | 2017-06-13 |
| 9673108 | Fabrication of higher-K dielectrics | Min Dai, Dominic J. Schepis, Shahab Siddiqui | 2017-06-06 |
| 9653534 | Trench metal-insulator-metal capacitor with oxygen gettering layer | Takashi Ando, Eduard A. Cartier, Aritra Dasgupta, Herbert L. Ho, Donghun Kang +3 more | 2017-05-16 |
| 9627508 | Replacement channel TFET | Siddarth A. Krishnan, Unoh Kwon, Vijay Narayanan, Jeffrey W. Sleight | 2017-04-18 |
| 9577100 | FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions | Kangguo Cheng, Eric C. Harley, Judson R. Holt, Yue Ke, Rishikesh Krishnan +2 more | 2017-02-21 |
| 9564505 | Changing effective work function using ion implantation during dual work function metal gate integration | Martin M. Frank, Herbert L. Ho, Mark J. Hurley, Rashmi Jha, Naim Moumen +3 more | 2017-02-07 |
| 9536985 | Epitaxial growth of material on source/drain regions of FinFET structure | Brian J. Greene, Eric C. Harley, Judson R. Holt, Yue Ke, Rishikesh Krishnan +2 more | 2017-01-03 |