| 9799656 |
Semiconductor device having a gate stack with tunable work function |
Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon |
2017-10-24 |
| 9793397 |
Ferroelectric gate dielectric with scaled interfacial layer for steep sub-threshold slope field-effect transistor |
Takashi Ando, Martin M. Frank |
2017-10-17 |
| 9748145 |
Semiconductor devices with varying threshold voltage and fabrication methods thereof |
Balaji Kannan, Unoh Kwon, Siddarth A. Krishnan, Takashi Ando |
2017-08-29 |
| 9685521 |
Lowering parasitic capacitance of replacement metal gate processes |
Effendi Leobandung |
2017-06-20 |
| 9660027 |
Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor |
Siddarth A. Krishnan, Unoh Kwon, Jeffrey W. Sleight |
2017-05-23 |
| 9653534 |
Trench metal-insulator-metal capacitor with oxygen gettering layer |
Takashi Ando, Eduard A. Cartier, Michael P. Chudzik, Aritra Dasgupta, Herbert L. Ho +3 more |
2017-05-16 |
| 9646887 |
Tailored silicon layers for transistor multi-gate control |
John Rozen |
2017-05-09 |
| 9646886 |
Tailored silicon layers for transistor multi-gate control |
John Rozen |
2017-05-09 |
| 9634116 |
Method to improve reliability of high-K metal gate stacks |
Takashi Ando, Eduard A. Cartier, Barry P. Linder |
2017-04-25 |
| 9627508 |
Replacement channel TFET |
Michael P. Chudzik, Siddarth A. Krishnan, Unoh Kwon, Jeffrey W. Sleight |
2017-04-18 |
| 9608066 |
High-K spacer for extension-free CMOS devices with high mobility channel materials |
Takashi Ando, Pouya Hashemi, Yanning Sun |
2017-03-28 |
| 9590100 |
Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structure |
Catherine A. Dubourdieu, Martin M. Frank |
2017-03-07 |
| 9589851 |
Dipole-based contact structure to reduce metal-semiconductor contact resistance in MOSFETs |
Huiming Bu, Hui-feng Li, Hiroaki Niimi, Tenko Yamashita |
2017-03-07 |
| 9583400 |
Gate stack with tunable work function |
Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon |
2017-02-28 |
| 9564505 |
Changing effective work function using ion implantation during dual work function metal gate integration |
Michael P. Chudzik, Martin M. Frank, Herbert L. Ho, Mark J. Hurley, Rashmi Jha +3 more |
2017-02-07 |
| 9559016 |
Semiconductor device having a gate stack with tunable work function |
Ruqiang Bao, Siddarth A. Krishnan, Unoh Kwon |
2017-01-31 |
| 9548381 |
Method and structure for III-V nanowire tunnel FETs |
Siddarth A. Krishnan, Unoh Kwon, Jeffrey W. Sleight |
2017-01-17 |
