| 9824930 |
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme |
Takashi Ando, Hemanth Jagannathan, Balaji Kannan, Unoh Kwon, Rekha Rajaram |
2017-11-21 |
| 9799656 |
Semiconductor device having a gate stack with tunable work function |
Ruqiang Bao, Unoh Kwon, Vijay Narayanan |
2017-10-24 |
| 9768171 |
Method to form dual tin layers as pFET work metal stack |
Ruqiang Bao |
2017-09-19 |
| 9748354 |
Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof |
Wei V. Tang, Paul F. Ma, Steven C. H. Hung, Michael P. Chudzik, Wenyu Zhang +6 more |
2017-08-29 |
| 9748145 |
Semiconductor devices with varying threshold voltage and fabrication methods thereof |
Balaji Kannan, Unoh Kwon, Takashi Ando, Vijay Narayanan |
2017-08-29 |
| 9741720 |
Higher ‘K’ gate dielectric cap for replacement metal gate (RMG) FINFET devices |
Shahab Siddiqui, Balaji Kannan |
2017-08-22 |
| 9721842 |
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme |
Takashi Ando, Hemanth Jagannathan, Balaji Kannan, Unoh Kwon, Rekha Rajaram |
2017-08-01 |
| 9704758 |
Forming a semiconductor structure for reduced negative bias temperature instability |
Ruqiang Bao |
2017-07-11 |
| 9691662 |
Field effect transistors having multiple effective work functions |
Takashi Ando, Min Dai, Balaji Kannan, Unoh Kwon |
2017-06-27 |
| 9679810 |
Integrated circuit having improved electromigration performance and method of forming same |
Joyeeta Nag, Shishir Ray, Andrew H. Simon, Oleg Gluschenkov, Michael P. Chudzik |
2017-06-13 |
| 9660027 |
Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor |
Unoh Kwon, Vijay Narayanan, Jeffrey W. Sleight |
2017-05-23 |
| 9627508 |
Replacement channel TFET |
Michael P. Chudzik, Unoh Kwon, Vijay Narayanan, Jeffrey W. Sleight |
2017-04-18 |
| 9583400 |
Gate stack with tunable work function |
Ruqiang Bao, Unoh Kwon, Vijay Narayanan |
2017-02-28 |
| 9576958 |
Forming a semiconductor structure for reduced negative bias temperature instability |
Ruqiang Bao |
2017-02-21 |
| 9559016 |
Semiconductor device having a gate stack with tunable work function |
Ruqiang Bao, Unoh Kwon, Vijay Narayanan |
2017-01-31 |
| 9553092 |
Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETs |
Ruqiang Bao, Unoh Kwon, Keith Kwong Hon Wong |
2017-01-24 |
| 9548381 |
Method and structure for III-V nanowire tunnel FETs |
Unoh Kwon, Vijay Narayanan, Jeffrey W. Sleight |
2017-01-17 |
