| 9824930 |
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme |
Takashi Ando, Hemanth Jagannathan, Balaji Kannan, Siddarth A. Krishnan, Rekha Rajaram |
2017-11-21 |
| 9818746 |
Structure and method to suppress work function effect by patterning boundary proximity in replacement metal gate |
Ruqiang Bao, Kai Zhao |
2017-11-14 |
| 9806161 |
Integrated circuit structure having thin gate dielectric device and thick gate dielectric device |
Shahrukh Khan, Shahab Siddiqui, Sean M. Polvino, Joseph F. Shepard, Jr. |
2017-10-31 |
| 9799656 |
Semiconductor device having a gate stack with tunable work function |
Ruqiang Bao, Siddarth A. Krishnan, Vijay Narayanan |
2017-10-24 |
| 9748145 |
Semiconductor devices with varying threshold voltage and fabrication methods thereof |
Balaji Kannan, Siddarth A. Krishnan, Takashi Ando, Vijay Narayanan |
2017-08-29 |
| 9721842 |
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme |
Takashi Ando, Hemanth Jagannathan, Balaji Kannan, Siddarth A. Krishnan, Rekha Rajaram |
2017-08-01 |
| 9691662 |
Field effect transistors having multiple effective work functions |
Takashi Ando, Min Dai, Balaji Kannan, Siddarth A. Krishnan |
2017-06-27 |
| 9660027 |
Expitaxially regrown heterostructure nanowire lateral tunnel field effect transistor |
Siddarth A. Krishnan, Vijay Narayanan, Jeffrey W. Sleight |
2017-05-23 |
| 9627508 |
Replacement channel TFET |
Michael P. Chudzik, Siddarth A. Krishnan, Vijay Narayanan, Jeffrey W. Sleight |
2017-04-18 |
| 9613870 |
Gate stack formed with interrupted deposition processes and laser annealing |
Takashi Ando, Aritra Dasgupta, Oleg Gluschenkov, Balaji Kannan |
2017-04-04 |
| 9613866 |
Gate stack formed with interrupted deposition processes and laser annealing |
Takashi Ando, Aritra Dasgupta, Oleg Gluschenkov, Balaji Kannan |
2017-04-04 |
| 9589806 |
Integrated circuit with replacement gate stacks and method of forming same |
Ruqiang Bao, Huihang Dong, John A. Fitzsimmons |
2017-03-07 |
| 9583400 |
Gate stack with tunable work function |
Ruqiang Bao, Siddarth A. Krishnan, Vijay Narayanan |
2017-02-28 |
| 9559016 |
Semiconductor device having a gate stack with tunable work function |
Ruqiang Bao, Siddarth A. Krishnan, Vijay Narayanan |
2017-01-31 |
| 9553092 |
Alternative threshold voltage scheme via direct metal gate patterning for high performance CMOS FinFETs |
Ruqiang Bao, Siddarth A. Krishnan, Keith Kwong Hon Wong |
2017-01-24 |
| 9548381 |
Method and structure for III-V nanowire tunnel FETs |
Siddarth A. Krishnan, Vijay Narayanan, Jeffrey W. Sleight |
2017-01-17 |
