| 9853115 |
Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts |
Shariq Siddiqui, Tenko Yamashita |
2017-12-26 |
| 9842933 |
Formation of bottom junction in vertical FET devices |
Kwan-Yong Lim, Steven Bentley, Daniel Chanemougame |
2017-12-12 |
| 9805986 |
High mobility transistors |
Manoj Mehrotra, Rick L. Wise |
2017-10-31 |
| 9779946 |
System and method for mitigating oxide growth in a gate dielectric |
Malcolm J. Bevan, Haowen Bu, Husam N. Alshareef |
2017-10-03 |
| 9780192 |
Fringe capacitance reduction for replacement gate CMOS |
Mahalingam Nandakumar |
2017-10-03 |
| 9779987 |
Titanium silicide formation in a narrow source-drain contact |
Min Gyu Sung, Kwanyong LIM |
2017-10-03 |
| 9735111 |
Dual metal-insulator-semiconductor contact structure and formulation method |
Takashi Ando, Tenko Yamashita |
2017-08-15 |
| 9721796 |
Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget |
James Joseph Chambers |
2017-08-01 |
| 9721847 |
High-k / metal gate CMOS transistors with TiN gates |
Brian K. Kirkpatrick |
2017-08-01 |
| 9640636 |
Methods of forming replacement gate structures and bottom and top source/drain regions on a vertical transistor device |
Steven Bentley, John H. Zhang, Kwan-Yong Lim |
2017-05-02 |
| 9640535 |
Method for forming source/drain contacts during CMOS integration using confined epitaxial growth techniques and the resulting semiconductor devices |
Ruilong Xie |
2017-05-02 |
| 9589851 |
Dipole-based contact structure to reduce metal-semiconductor contact resistance in MOSFETs |
Huiming Bu, Hui-feng Li, Vijay Narayanan, Tenko Yamashita |
2017-03-07 |
| 9576804 |
System and method for mitigating oxide growth in a gate dielectric |
Malcolm J. Bevan, Haowen Bu, Husam N. Alshareef |
2017-02-21 |
| 9543216 |
Integration of hybrid germanium and group III-V contact epilayer in CMOS |
Ruilong Xie |
2017-01-10 |
