| 9812575 |
Contact formation for stacked FinFETs |
Alexander Reznicek, Pouya Hashemi, Kangguo Cheng |
2017-11-07 |
| 9793113 |
Semiconductor structure having insulator pillars and semiconductor material on substrate |
Alexander Reznicek, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi |
2017-10-17 |
| 9754941 |
Method and structure to form tensile strained SiGe fins and compressive strained SiGe fins on a same substrate |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2017-09-05 |
| 9735257 |
finFET having highly doped source and drain regions |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2017-08-15 |
| 9728626 |
Almost defect-free active channel region |
Charan V. Surisetty, Kangguo Cheng, Alexander Reznicek |
2017-08-08 |
| 9722052 |
Fin cut without residual fin defects |
Kangguo Cheng, Pouya Hashemi, Alexander Reznicek |
2017-08-01 |
| 9679763 |
Silicon-on-insulator fin field-effect transistor device formed on a bulk substrate |
Kangguo Cheng, Pouya Hashemi, Alexander Reznicek |
2017-06-13 |
| 9673108 |
Fabrication of higher-K dielectrics |
Michael P. Chudzik, Min Dai, Shahab Siddiqui |
2017-06-06 |
| 9660059 |
Fin replacement in a field-effect transistor |
Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2017-05-23 |
| 9647119 |
Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step |
Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek |
2017-05-09 |
| 9634142 |
Method for improving boron diffusion in a germanium-rich fin through germanium concentration reduction in fin S/D regions by thermal mixing |
Alexander Reznicek, Pouya Hashemi, Kangguo Cheng |
2017-04-25 |
| 9601624 |
SOI based FINFET with strained source-drain regions |
Stephen W. Bedell, Joel P. de Souza, Keith E. Fogel, Alexander Reznicek, Devendra K. Sadana |
2017-03-21 |
| 9590077 |
Local SOI fins with multiple heights |
Kangguo Cheng, Joel P. de Souza, Ali Khakifirooz, Alexander Reznicek |
2017-03-07 |
