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Joel P. de Souza

IBM: 10 patents #443 of 10,852Top 5%
Globalfoundries: 1 patents #454 of 1,311Top 35%
📍 Putnam Valley, NY: #2 of 24 inventorsTop 9%
🗺 New York: #255 of 12,278 inventorsTop 3%
Overall (2017): #5,945 of 506,227Top 2%
11
Patents 2017

Issued Patents 2017

Showing 1–11 of 11 patents

Patent #TitleCo-InventorsDate
9799747 Low resistance contact for semiconductor devices Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana, Brent A. Wacaser 2017-10-24
9786756 Self-aligned source and drain regions for semiconductor devices Bahman Hekmatshoartabari, Jeehwan Kim, Siegfried Maurer, Devendra K. Sadana 2017-10-10
9768254 Leakage-free implantation-free ETSOI transistors Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana 2017-09-19
9673290 Self-aligned source and drain regions for semiconductor devices Bahman Hekmatshoartabari, Jeehwan Kim, Siegfried Maurer, Devendra K. Sadana 2017-06-06
9653570 Junction interlayer dielectric for reducing leakage current in semiconductor devices Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana, Brent A. Wacaser 2017-05-16
9620592 Doped zinc oxide and n-doping to reduce junction leakage Keith E. Fogel, Jeehwan Kim, Siegfried Maurer, Devendra K. Sadana 2017-04-11
9601624 SOI based FINFET with strained source-drain regions Stephen W. Bedell, Keith E. Fogel, Alexander Reznicek, Devendra K. Sadana, Dominic J. Schepis 2017-03-21
9590077 Local SOI fins with multiple heights Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek, Dominic J. Schepis 2017-03-07
9583562 Reduction of defect induced leakage in III-V semiconductor devices Jeehwan Kim, Devendra K. Sadana, Brent A. Wacaser 2017-02-28
9553056 Semiconductor chip having tampering feature Ali Afzali-Ardakani, Bahman Hekmatshoartabari, Daniel M. Kuchta, Devendra K. Sadana 2017-01-24
9536945 MOSFET with ultra low drain leakage Keith E. Fogel, Jeehwan Kim, Devendra K. Sadana 2017-01-03