| 9818909 |
LED light extraction enhancement enabled using self-assembled particles patterned surface |
Jeehwan Kim, Ning Li, Devendra K. Sadana |
2017-11-14 |
$4,491,000 |
| 9799747 |
Low resistance contact for semiconductor devices |
Joel P. de Souza, Jeehwan Kim, Devendra K. Sadana, Brent A. Wacaser |
2017-10-24 |
$3,030,000 |
| 9799600 |
Nickel-silicon fuse for FinFET structures |
Kangguo Cheng, Pouya Hashemi, Alexander Reznicek |
2017-10-24 |
$3,030,000 |
| 9793114 |
Uniform height tall fins with varying silicon germanium concentrations |
Stephen W. Bedell, Bruce B. Doris, Alexander Reznicek |
2017-10-17 |
$4,096,000 |
| 9768254 |
Leakage-free implantation-free ETSOI transistors |
Joel P. de Souza, Jeehwan Kim, Devendra K. Sadana |
2017-09-19 |
$2,669,000 |
| 9768262 |
Embedded carbon-doped germanium as stressor for germanium nFET devices |
Jeffrey L. Dittmar, Sebastian Naczas, Alexander Reznicek, Devendra K. Sadana |
2017-09-19 |
$2,669,000 |
| 9754875 |
Designable channel FinFET fuse |
Pouya Hashemi, Shogo Mochizuki, Alexander Reznicek |
2017-09-05 |
$2,785,000 |
| 9748353 |
Method of making a gallium nitride device |
Stephen W. Bedell, Paul A. Lauro, Devendra K. Sadana |
2017-08-29 |
$2,195,000 |
| 9741880 |
Three-dimensional conductive electrode for solar cell |
Augustin J. Hong, Jeehwan Kim, Devendra K. Sadana |
2017-08-22 |
$2,056,000 |
| 9741807 |
FinFET device with vertical silicide on recessed source/drain epitaxy regions |
Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek |
2017-08-22 |
$2,056,000 |
| 9722033 |
Doped zinc oxide as n+ layer for semiconductor devices |
Joel P. Desouza, Jeehwan Kim, Ko-Tao Lee, Devendra K. Sadana |
2017-08-01 |
$1,638,000 |
| 9722039 |
Fabricating high-power devices |
Stephen W. Bedell, Paul A. Lauro, Devendra K. Sadana |
2017-08-01 |
$1,638,000 |
| 9716207 |
Low reflection electrode for photovoltaic devices |
Jeehwan Kim, David B. Mitzi, Mark T. Winkler |
2017-07-25 |
$18,264,000 |
| 9713250 |
Patterned metallization handle layer for controlled spalling |
Turki bin Saud bin Mohammed Al-Saud, Stephen W. Bedell, Paul A. Lauro, Devendra K. Sadana |
2017-07-18 |
$2,009,000 |
| 9704860 |
Epitaxial oxide fin segments to prevent strained semiconductor fin end relaxation |
Karthik Balakrishnan, Sivananda K. Kanakasabapathy, Alexander Reznicek |
2017-07-11 |
$1,748,000 |
| 9666674 |
Formation of large scale single crystalline graphene |
Christos D. Dimitrakopoulos, Jeehwan Kim, Hongsik Park |
2017-05-30 |
$11,286,000 |
| 9660116 |
Nanowires formed by employing solder nanodots |
Jeehwan Kim, Jae-Woong Nah, Devendra K. Sadana, Kuen-Ting Shiu |
2017-05-23 |
$2,171,000 |
| 9653570 |
Junction interlayer dielectric for reducing leakage current in semiconductor devices |
Joel P. de Souza, Jeehwan Kim, Devendra K. Sadana, Brent A. Wacaser |
2017-05-16 |
$2,370,000 |
| 9646832 |
Porous fin as compliant medium to form dislocation-free heteroepitaxial films |
Kangguo Cheng, Jeehwan Kim, Devendra K. Sadana |
2017-05-09 |
$2,584,000 |
| 9634164 |
Reduced light degradation due to low power deposition of buffer layer |
Augustin J. Hong, Jeehwan Kim, Devendra K. Sadana |
2017-04-25 |
$1,937,000 |
| 9620592 |
Doped zinc oxide and n-doping to reduce junction leakage |
Joel P. de Souza, Jeehwan Kim, Siegfried Maurer, Devendra K. Sadana |
2017-04-11 |
$2,654,000 |
| 9601482 |
Economical and environmentally friendly chemical mechanical polishing for III-V compound semiconductor device fabrication |
Alexander Reznicek, Devendra K. Sadana, Charan V. Surisetty |
2017-03-21 |
$2,195,000 |
| 9601624 |
SOI based FINFET with strained source-drain regions |
Stephen W. Bedell, Joel P. de Souza, Alexander Reznicek, Devendra K. Sadana, Dominic J. Schepis |
2017-03-21 |
$11,989,000 |
| 9583572 |
FinFET devices having silicon germanium channel fin structures with uniform thickness |
Veeraraghavan S. Basker, Pouya Hashemi, Alexander Reznicek |
2017-02-28 |
$2,397,000 |
| 9576806 |
FinFET device with vertical silicide on recessed source/drain epitaxy regions |
Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek |
2017-02-21 |
$2,827,000 |
