Issued Patents 2017
Showing 1–19 of 19 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9812556 | Semiconductor device and method of manufacturing the semiconductor device | Shogo Mochizuki, Gen Tsutsui, Raghavasimhan Sreenivasan, Qiqing C. Ouyang, Alexander Reznicek | 2017-11-07 |
| 9773903 | Asymmetric III-V MOSFET on silicon substrate | Cheng-Wei Cheng, Effendi Leobandung, Amlan Majumdar, Renee T. Mo, Yanning Sun | 2017-09-26 |
| 9755078 | Structure and method for multi-threshold voltage adjusted silicon germanium alloy devices with same silicon germanium content | Pouya Hashemi, Christine Qiqing Ouyang, Alexander Reznicek | 2017-09-05 |
| 9748114 | Method for forming through silicon via in N+ epitaxy wafers with reduced parasitic capacitance | Kangguo Cheng, Subramanian S. Iyer, Ali Khakifirooz | 2017-08-29 |
| 9741807 | FinFET device with vertical silicide on recessed source/drain epitaxy regions | Keith E. Fogel, Qiqing C. Ouyang, Alexander Reznicek | 2017-08-22 |
| 9722031 | Reduced current leakage semiconductor device | Cheng-Wei Cheng, Young-Hee Kim, Effendi Leobandung, Yanning Sun | 2017-08-01 |
| 9679969 | Semiconductor device including epitaxially formed buried channel region | Jie Deng, Qiqing C. Ouyang, Alexander Reznicek | 2017-06-13 |
| 9673190 | ESD device compatible with bulk bias capability | Kangguo Cheng, Bruce B. Doris, Terence B. Hook, Ali Khakifirooz, Balasubramanian Pranatharthiharan +1 more | 2017-06-06 |
| 9647119 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Qiqing C. Ouyang, Alexander Reznicek, Dominic J. Schepis | 2017-05-09 |
| 9640552 | Multi-height fin field effect transistors | Carl Radens, Sudesh Saroop | 2017-05-02 |
| 9634028 | Metallized junction FinFET structures | Bruce B. Doris, Alexander Reznicek, Joshua M. Rubin | 2017-04-25 |
| 9627482 | Reduced current leakage semiconductor device | Cheng-Wei Cheng, Young-Hee Kim, Effendi Leobandung, Yanning Sun | 2017-04-18 |
| 9627410 | Metallized junction FinFET structures | Bruce B. Doris, Alexander Reznicek, Joshua M. Rubin | 2017-04-18 |
| 9595598 | Semiconductor device including epitaxially formed buried channel region | Jie Deng, Qiqing C. Ouyang, Alexander Reznicek | 2017-03-14 |
| 9590106 | Semiconductor device including epitaxially formed buried channel region | Jie Deng, Qiqing C. Ouyang, Alexander Reznicek | 2017-03-07 |
| 9576085 | Selective importance sampling | Rajiv V. Joshi, Rouwaida N. Kanj | 2017-02-21 |
| 9576806 | FinFET device with vertical silicide on recessed source/drain epitaxy regions | Keith E. Fogel, Qiqing C. Ouyang, Alexander Reznicek | 2017-02-21 |
| 9553166 | Asymmetric III-V MOSFET on silicon substrate | Cheng-Wei Cheng, Effendi Leobandung, Amlan Majumdar, Renee T. Mo, Yanning Sun | 2017-01-24 |
| 9548356 | Shallow trench isolation structures | Bruce B. Doris, Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Arvind Kumar +1 more | 2017-01-17 |