Issued Patents 2017
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9786781 | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction | Christopher N. Brindle, Alper Genc, Chieh-Kai Yang | 2017-10-10 |
| 9679969 | Semiconductor device including epitaxially formed buried channel region | Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek | 2017-06-13 |
| 9653601 | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction | Christopher N. Brindle, Alper Genc, Chieh-Kai Yang | 2017-05-16 |
| 9639652 | Compact model for device/circuit/chip leakage current (IDDQ) calculation including process induced uplift factors | Paul Chang, Terrence B. Hook, Sim Y. Loo, Anda C. Mocuta, Jae-Eun Park +2 more | 2017-05-02 |
| 9601492 | FinFET devices and methods of forming the same | Yi-Jen Chen, Horng-Huei Tseng | 2017-03-21 |
| 9595598 | Semiconductor device including epitaxially formed buried channel region | Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek | 2017-03-14 |
| 9590106 | Semiconductor device including epitaxially formed buried channel region | Pranita Kerber, Qiqing C. Ouyang, Alexander Reznicek | 2017-03-07 |