| 9831084 |
Hydroxyl group termination for nucleation of a dielectric metallic oxide |
Takashi Ando, Michael P. Chudzik, Min Dai, Martin M. Frank, David F. Hilscher +3 more |
2017-11-28 |
| 9653534 |
Trench metal-insulator-metal capacitor with oxygen gettering layer |
Takashi Ando, Eduard A. Cartier, Michael P. Chudzik, Aritra Dasgupta, Herbert L. Ho +3 more |
2017-05-16 |
| 9653535 |
DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods |
Nicolas L. Breil, Ricardo A. Donaton, Dong-Hun Kang, Herbert L. Ho |
2017-05-16 |
| 9577100 |
FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions |
Kangguo Cheng, Michael P. Chudzik, Eric C. Harley, Judson R. Holt, Yue Ke +2 more |
2017-02-21 |
| 9536985 |
Epitaxial growth of material on source/drain regions of FinFET structure |
Michael P. Chudzik, Brian J. Greene, Eric C. Harley, Judson R. Holt, Yue Ke +2 more |
2017-01-03 |
