Issued Patents 2017
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9805992 | Strained finFET device fabrication | Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Fee Li Lie, Stuart A. Sieg | 2017-10-31 |
| 9805991 | Strained finFET device fabrication | Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Fee Li Lie, Stuart A. Sieg | 2017-10-31 |
| 9793402 | Retaining strain in finFET devices | Bruce B. Doris, Fee Li Lie, Junli Wang | 2017-10-17 |
| 9741856 | Stress retention in fins of fin field-effect transistors | Sivananda K. Kanakasabapathy, Juntao Li, Fee Li Lie, Stuart A. Sieg, John R. Sporre | 2017-08-22 |
| 9735275 | Channel replacement and bimodal doping scheme for bulk finFET threshold voltage modulation with reduced performance penalty | Robert R. Robison, Reinaldo Vega | 2017-08-15 |
| 9728642 | Retaining strain in finFET devices | Bruce B. Doris, Fee Li Lie, Junli Wang | 2017-08-08 |
| 9721848 | Cutting fins and gates in CMOS devices | Huiming Bu, Kangguo Cheng, Andrew M. Greene, Dechao Guo, Sivananda K. Kanakasabapathy +6 more | 2017-08-01 |
| 9711507 | Separate N and P fin etching for reduced CMOS device leakage | Isabel Cristina Chu, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Mona A. Ebrish, Fee Li Lie +3 more | 2017-07-18 |
| 9640640 | FinFET device with channel strain | Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Fee Li Lie | 2017-05-02 |
| 9576979 | Preventing strained fin relaxation by sealing fin ends | Kangguo Cheng, Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Juntao Li +3 more | 2017-02-21 |