| 9805992 |
Strained finFET device fabrication |
Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Fee Li Lie, Stuart A. Sieg |
2017-10-31 |
| 9805991 |
Strained finFET device fabrication |
Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Fee Li Lie, Stuart A. Sieg |
2017-10-31 |
| 9793402 |
Retaining strain in finFET devices |
Bruce B. Doris, Fee Li Lie, Junli Wang |
2017-10-17 |
| 9741856 |
Stress retention in fins of fin field-effect transistors |
Sivananda K. Kanakasabapathy, Juntao Li, Fee Li Lie, Stuart A. Sieg, John R. Sporre |
2017-08-22 |
| 9735275 |
Channel replacement and bimodal doping scheme for bulk finFET threshold voltage modulation with reduced performance penalty |
Robert R. Robison, Reinaldo Vega |
2017-08-15 |
| 9728642 |
Retaining strain in finFET devices |
Bruce B. Doris, Fee Li Lie, Junli Wang |
2017-08-08 |
| 9721848 |
Cutting fins and gates in CMOS devices |
Huiming Bu, Kangguo Cheng, Andrew M. Greene, Dechao Guo, Sivananda K. Kanakasabapathy +6 more |
2017-08-01 |
| 9711507 |
Separate N and P fin etching for reduced CMOS device leakage |
Isabel Cristina Chu, Lawrence A. Clevenger, Leigh Anne H. Clevenger, Mona A. Ebrish, Fee Li Lie +3 more |
2017-07-18 |
| 9640640 |
FinFET device with channel strain |
Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Fee Li Lie |
2017-05-02 |
| 9576979 |
Preventing strained fin relaxation by sealing fin ends |
Kangguo Cheng, Bruce B. Doris, Hong He, Sivananda K. Kanakasabapathy, Juntao Li +3 more |
2017-02-21 |
