| 9853127 |
Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer process |
Brent A. Anderson, Huiming Bu, Terence B. Hook, Fee Li Lie |
2017-12-26 |
$2,704,000 |
| 9853022 |
MIM capacitor formation in RMG module |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2017-12-26 |
$2,704,000 |
| 9847261 |
Metal reflow for middle of line contacts |
Juntao Li, Chih-Chao Yang |
2017-12-19 |
$7,368,000 |
| 9842931 |
Self-aligned shallow trench isolation and doping for vertical fin transistors |
Brent A. Anderson, Fee Li Lie |
2017-12-12 |
$7,756,000 |
| 9837309 |
Semiconductor via structure with lower electrical resistance |
Lawrence A. Clevenger, Baozhen Li, Kirk D. Peterson, Terry A. Spooner |
2017-12-05 |
$3,039,000 |
| 9837535 |
Directional deposition of protection layer |
Hong He, Juntao Li, Chih-Chao Yang |
2017-12-05 |
$3,039,000 |
| 9818650 |
Extra gate device for nanosheet |
Bruce B. Doris, Terence B. Hook |
2017-11-14 |
$4,491,000 |
| 9812567 |
Precise control of vertical transistor gate length |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2017-11-07 |
$4,555,000 |
| 9805987 |
Self-aligned punch through stopper liner for bulk FinFET |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2017-10-31 |
$5,356,000 |
| 9805935 |
Bottom source/drain silicidation for vertical field-effect transistor (FET) |
Brent A. Anderson, Huiming Bu, Terence B. Hook, Fee Li Lie |
2017-10-31 |
$5,356,000 |
| 9799765 |
Formation of a bottom source-drain for vertical field-effect transistors |
Marc A. Bergendahl, Kangguo Cheng, Fee Li Lie, Shogo Mochizuki |
2017-10-24 |
$3,030,000 |
| 9793402 |
Retaining strain in finFET devices |
Bruce B. Doris, Gauri Karve, Fee Li Lie |
2017-10-17 |
$4,096,000 |
| 9793175 |
FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2017-10-17 |
$4,096,000 |
| 9786563 |
Fin pitch scaling for high voltage devices and low voltage devices on the same wafer |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2017-10-10 |
$2,342,000 |
| 9786656 |
Integration of bipolar transistor into complimentary metal-oxide-semiconductor process |
Brent A. Anderson, Xuefeng Liu |
2017-10-10 |
$2,342,000 |
| 9780091 |
Fin pitch scaling for high voltage devices and low voltage devices on the same wafer |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2017-10-03 |
$4,036,000 |
| 9768079 |
Extra gate device for nanosheet |
Bruce B. Doris, Terence B. Hook |
2017-09-19 |
$2,669,000 |
| 9768118 |
Contact having self-aligned air gap spacers |
Juntao Li, Chih-Chao Yang |
2017-09-19 |
$2,669,000 |
| 9761496 |
Field effect transistor contacts |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2017-09-12 |
$1,776,000 |
| 9761500 |
FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure |
Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert |
2017-09-12 |
$1,776,000 |
| 9761699 |
Integration of strained silicon germanium PFET device and silicon NFET device for finFET structures |
Bruce B. Doris, Hong He, Nicolas Loubet |
2017-09-12 |
$1,776,000 |
| 9755071 |
Merged gate for vertical transistors |
Brent A. Anderson, Fee Li Lie, Edward J. Nowak |
2017-09-05 |
$2,785,000 |
| 9748380 |
Vertical transistor including a bottom source/drain region, a gate structure, and an air gap formed between the bottom source/drain region and the gate structure |
Fee Li Lie, Shogo Mochizuki |
2017-08-29 |
$2,195,000 |
| 9741577 |
Metal reflow for middle of line contacts |
Juntao Li, Chih-Chao Yang |
2017-08-22 |
$2,056,000 |
| 9741792 |
Bulk nanosheet with dielectric isolation |
Kangguo Cheng, Bruce B. Doris |
2017-08-22 |
$2,056,000 |
