Issued Patents 2017
Showing 26–50 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9735246 | Air-gap top spacer and self-aligned metal gate for vertical fets | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2017-08-15 |
| 9728642 | Retaining strain in finFET devices | Bruce B. Doris, Gauri Karve, Fee Li Lie | 2017-08-08 |
| 9716042 | Fin field-effect transistor (FinFET) with reduced parasitic capacitance | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2017-07-25 |
| 9716045 | Directly forming SiGe fins on oxide | Kangguo Cheng, Hong He, Juntao Li | 2017-07-25 |
| 9704990 | Vertical FET with strained channel | Shogo Mochizuki | 2017-07-11 |
| 9698212 | Three-dimensional metal resistor formation | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2017-07-04 |
| 9698098 | Anti-fuse structure and method for manufacturing the same | Hong He, Juntao Li, Chih-Chao Yang | 2017-07-04 |
| 9698215 | MIM capacitor formation in RMG module | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2017-07-04 |
| 9698226 | Recess liner for silicon germanium fin formation | Timothy J. McArdle, Judson R. Holt | 2017-07-04 |
| 9691877 | Replacement metal gate structures | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2017-06-27 |
| 9685539 | Nanowire isolation scheme to reduce parasitic capacitance | Kangguo Cheng, Bruce B. Doris | 2017-06-20 |
| 9685532 | Replacement metal gate structures | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2017-06-20 |
| 9685507 | FinFET devices | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2017-06-20 |
| 9673199 | Gate cutting for a vertical transistor device | Brent A. Anderson, Sivananda K. Kanakasabapathy, Stuart A. Sieg, John R. Sporre | 2017-06-06 |
| 9666533 | Airgap formation between source/drain contacts and gates | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2017-05-30 |
| 9666527 | Middle of the line integrated eFuse in trench EPI structure | Hong He, Juntao Li, Chih-Chao Yang | 2017-05-30 |
| 9653456 | MIM capacitor formation in RMG module | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2017-05-16 |
| 9653575 | Vertical transistor with a body contact for back-biasing | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2017-05-16 |
| 9640641 | Silicon germanium fin channel formation | Hong He, Nicolas Loubet | 2017-05-02 |
| 9634010 | Field effect transistor device spacers | Rama Kambhampati, Ruilong Xie, Tenko Yamashita | 2017-04-25 |
| 9634090 | Preventing buried oxide gouging during planar and FinFET processing on SOI | Kern Rim | 2017-04-25 |
| 9634027 | CMOS structure on SSOI wafer | Bruce B. Doris, Hong He, Ali Khakifirooz | 2017-04-25 |
| 9634005 | Gate planarity for FinFET using dummy polish stop | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2017-04-25 |
| 9627373 | CMOS compatible fuse or resistor using self-aligned contacts | Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert | 2017-04-18 |
| 9627263 | Stop layer through ion implantation for etch stop | Hong He, Siva Kanakasabapathy, Yunpeng Yin, Chiahsun Tseng | 2017-04-18 |