Issued Patents 2017
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9768276 | Method and structure of forming FinFET electrical fuse structure | Hong He, Juntao Li, Chih-Chao Yang | 2017-09-19 |
| 9728625 | Fin formation in fin field effect transistors | Kangguo Cheng, Bruce B. Doris, Hong He, Ali Khakifirooz | 2017-08-08 |
| 9728534 | Densely spaced fins for semiconductor fin field effect transistors | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2017-08-08 |
| 9728419 | Fin density control of multigate devices through sidewall image transfer processes | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2017-08-08 |
| 9716038 | Critical dimension shrink through selective metal growth on metal hardmask sidewalls | Hsueh-Chung Chen, Hong He, Juntao Li, Chih-Chao Yang | 2017-07-25 |
| 9647092 | Method and structure of forming FinFET electrical fuse structure | Hong He, Juntao Li, Chih-Chao Yang | 2017-05-09 |
| 9634117 | Self-aligned contact process enabled by low temperature | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2017-04-25 |
| 9634000 | Partially isolated fin-shaped field effect transistors | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2017-04-25 |
| 9627263 | Stop layer through ion implantation for etch stop | Hong He, Siva Kanakasabapathy, Chiahsun Tseng, Junli Wang | 2017-04-18 |
| 9595473 | Critical dimension shrink through selective metal growth on metal hardmask sidewalls | Hsueh-Chung Chen, Hong He, Juntao Li, Chih-Chao Yang | 2017-03-14 |
| 9583585 | Gate structure integration scheme for fin field effect transistors | Hong He, Chiahsun Tseng, Chun-Chen Yeh | 2017-02-28 |
| 9558999 | Ultra-thin metal wires formed through selective deposition | Juntao Li, Chih-Chao Yang | 2017-01-31 |
| 9543407 | Low-K spacer for RMG finFET formation | Hong He, Chiahsun Tseng, Tenko Yamashita, Chun-Chen Yeh | 2017-01-10 |