| 9853022 |
MIM capacitor formation in RMG module |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-12-26 |
$2,704,000 |
| 9812567 |
Precise control of vertical transistor gate length |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-11-07 |
$4,555,000 |
| 9805987 |
Self-aligned punch through stopper liner for bulk FinFET |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-10-31 |
$5,356,000 |
| 9793175 |
FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-10-17 |
$4,096,000 |
| 9786563 |
Fin pitch scaling for high voltage devices and low voltage devices on the same wafer |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-10-10 |
$2,342,000 |
| 9780035 |
Structure and method for improved stabilization of cobalt cap and/or cobalt liner in interconnects |
Benjamin D. Briggs, James J. Kelly, Koichi Motoyama, Roger A. Quon, Michael Rizzolo |
2017-10-03 |
$4,036,000 |
| 9780091 |
Fin pitch scaling for high voltage devices and low voltage devices on the same wafer |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-10-03 |
$4,036,000 |
| 9761500 |
FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-09-12 |
$1,776,000 |
| 9761496 |
Field effect transistor contacts |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-09-12 |
$1,776,000 |
| 9735246 |
Air-gap top spacer and self-aligned metal gate for vertical fets |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-08-15 |
$1,588,000 |
| 9721893 |
Self-forming barrier for subtractive copper |
Vamsi K. Paruchuri |
2017-08-01 |
$1,638,000 |
| 9716042 |
Fin field-effect transistor (FinFET) with reduced parasitic capacitance |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-07-25 |
$2,827,000 |
| 9704848 |
Electrostatic discharge devices and methods of manufacture |
Huiming Bu, Junjun Li, Tenko Yamashita |
2017-07-11 |
$1,748,000 |
| 9698215 |
MIM capacitor formation in RMG module |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-07-04 |
|
| 9698212 |
Three-dimensional metal resistor formation |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-07-04 |
|
| 9691877 |
Replacement metal gate structures |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-06-27 |
$2,603,000 |
| 9691659 |
Via and chamfer control for advanced interconnects |
Yann Mignot, Chih-Chao Yang |
2017-06-27 |
$2,603,000 |
| 9685532 |
Replacement metal gate structures |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-06-20 |
$2,315,000 |
| 9685507 |
FinFET devices |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-06-20 |
$2,315,000 |
| 9666529 |
Method and structure to reduce the electric field in semiconductor wiring interconnects |
Elbert E. Huang, Takeshi Nogami, Raghuveer R. Patlolla, Christopher J. Penny |
2017-05-30 |
$1,983,000 |
| 9666533 |
Airgap formation between source/drain contacts and gates |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-05-30 |
$1,983,000 |
| 9653456 |
MIM capacitor formation in RMG module |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-05-16 |
$2,370,000 |
| 9653575 |
Vertical transistor with a body contact for back-biasing |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-05-16 |
$2,370,000 |
| 9634005 |
Gate planarity for FinFET using dummy polish stop |
Veeraraghavan S. Basker, Kangguo Cheng, Junli Wang |
2017-04-25 |
$1,937,000 |
| 9633906 |
Gate structure cut after formation of epitaxial active regions |
Xiuyu Cai, Kangguo Cheng, Johnathan E. Faltermeier, Ali Khakifirooz, Ruilong Xie |
2017-04-25 |
$1,937,000 |
