Issued Patents 2017
Showing 1–4 of 4 patents
| Patent # | Title | Co-Inventors | Date | Approx Value ⓘ |
|---|---|---|---|---|
| 9735277 | Partially dielectric isolated fin-shaped field effect transistor (FinFET) | Kangguo Cheng, Ramachandra Divakaruni, Edward J. Nowak, Kern Rim | 2017-08-15 | $1,588,000 |
| 9633906 | Gate structure cut after formation of epitaxial active regions | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz, Theodorus E. Standaert, Ruilong Xie | 2017-04-25 | $1,937,000 |
| 9559009 | Gate structure cut after formation of epitaxial active regions | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz, Theodorus E. Standaert, Ruilong Xie | 2017-01-31 | $3,813,000 |
| 9537011 | Partially dielectric isolated fin-shaped field effect transistor (FinFET) | Kangguo Cheng, Ramachandra Divakaruni, Edward J. Nowak, Kern Rim | 2017-01-03 | $2,646,000 |