JW

Junli Wang

IBM: 64 patents #24 of 10,852Top 1%
Globalfoundries: 5 patents #89 of 1,311Top 7%
SS Stmicroelectronics Sa: 2 patents #29 of 135Top 25%
📍 Slingerlands, NY: #1 of 27 inventorsTop 4%
🗺 New York: #16 of 12,278 inventorsTop 1%
Overall (2017): #119 of 506,227Top 1%
65
Patents 2017

Issued Patents 2017

Showing 51–65 of 65 patents

Patent #TitleCo-InventorsDate
9614057 Enriched, high mobility strained fin having bottom dielectric isolation Bruce B. Doris, Hong He, Juntao Li, Chih-Chao Yang 2017-04-04
9613869 FinFET devices Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert 2017-04-04
9607943 Capacitors Veeraraghavan S. Basker, Kangguo Cheng, Christopher J. Penny, Theodorus E. Standaert 2017-03-28
9607903 Method for forming field effect transistors Rama Kambhampati, Ruilong Xie, Tenko Yamashita 2017-03-28
9601386 Fin isolation on a bulk wafer Hong He, Juntao Li, Chih-Chao Yang 2017-03-21
9576980 FinFET devices having gate dielectric structures with different thicknesses on same semiconductor structure Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert 2017-02-21
9570555 Source and drain epitaxial semiconductor material integration for high voltage semiconductor devices Balasubramanian Pranatharthiharan, Ruilong Xie 2017-02-14
9570591 Forming semiconductor device with close ground rules Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert 2017-02-14
9570571 Gate stack integrated metal resistors Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert 2017-02-14
9564437 Method and structure for forming FinFET CMOS with dual doped STI regions Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert 2017-02-07
9559014 Self-aligned punch through stopper liner for bulk FinFET Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert 2017-01-31
9553088 Forming semiconductor device with close ground rules Veeraraghavan S. Basker, Kangguo Cheng, Theodorus E. Standaert 2017-01-24
9548388 Forming field effect transistor device spacers Rama Kambhampati, Ruilong Xie, Tenko Yamashita 2017-01-17
9536986 Enriched, high mobility strained fin having bottom dielectric isolation Bruce B. Doris, Hong He, Juntao Li, Chih-Chao Yang 2017-01-03
9536988 Parasitic capacitance reduction Balasubramanian Pranatharthiharan 2017-01-03