Issued Patents 2017
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9799765 | Formation of a bottom source-drain for vertical field-effect transistors | Kangguo Cheng, Fee Li Lie, Shogo Mochizuki, Junli Wang | 2017-10-24 |
| 9780027 | Hybrid airgap structure with oxide liner | James J. Demarest, Christopher J. Penny, Christopher J. Waskiewicz | 2017-10-03 |
| 9768075 | Method and structure to enable dual channel fin critical dimension control | Kangguo Cheng, John R. Sporre, Sean Teehan | 2017-09-19 |
| 9754942 | Single spacer for complementary metal oxide semiconductor process flow | Kangguo Cheng, Jessica Dechene, Fee Li Lie, Eric R. Miller, Jeffrey C. Shearer +2 more | 2017-09-05 |
| 9748146 | Single spacer for complementary metal oxide semiconductor process flow | Kangguo Cheng, Jessica Dechene, Fee Li Lie, Eric R. Miller, Jeffrey C. Shearer +2 more | 2017-08-29 |
| 9728622 | Dummy gate formation using spacer pull down hardmask | Kangguo Cheng, Fee Li Lie, Eric R. Miller, John R. Sporre, Sean Teehan | 2017-08-08 |
| 9666528 | BEOL vertical fuse formed over air gap | James J. Demarest, Christopher J. Penny, Christopher J. Waskiewicz | 2017-05-30 |
| 9660030 | Replacement gate electrode with a self-aligned dielectric spacer | Shom Ponoth, Steven J. Holmes, David V. Horak, Charles W. Koburger, III, Chih-Chao Yang | 2017-05-23 |
| 9627377 | Self-aligned dielectric isolation for FinFET devices | Kangguo Cheng, David V. Horak, Ali Khakifirooz, Shom Ponoth, Theodorus E. Standaert +4 more | 2017-04-18 |
| 9620590 | Nanosheet channel-to-source and drain isolation | Kangguo Cheng, Fee Li Lie, Eric R. Miller, John R. Sporre, Sean Teehan | 2017-04-11 |
| 9608065 | Air gap spacer for metal gates | Kangguo Cheng, Fee Li Lie, Eric R. Miller, John R. Sporre, Sean Teehan | 2017-03-28 |