| 9837403 |
Asymmetrical vertical transistor |
Kangguo Cheng, Juntao Li, Peng Xu |
2017-12-05 |
| 9837408 |
Forming strained and unstrained features on a substrate |
Kangguo Cheng, Peng Xu, Zheng Xu |
2017-12-05 |
| 9824934 |
Shallow trench isolation recess process flow for vertical field effect transistor fabrication |
Kangguo Cheng, Bruce Miao, Xin Miao |
2017-11-21 |
| 9818875 |
Approach to minimization of strain loss in strained fin field effect transistors |
Kangguo Cheng, Juntao Li, Peng Xu |
2017-11-14 |
| 9799749 |
Vertical transport FET devices with uniform bottom spacer |
Kangguo Cheng, Juntao Li, Xin Miao |
2017-10-24 |
| 9768104 |
Method and structure to fabricate a nanoporous membrane |
Kangguo Cheng, Shogo Mochizuki, Hao Tang |
2017-09-19 |
| 9761450 |
Forming a fin cut in a hardmask |
Kangguo Cheng, Juntao Li, Peng Xu |
2017-09-12 |
| 9754798 |
Hybridization fin reveal for uniform fin reveal depth across different fin pitches |
Donald F. Canaperi, Thamarai S. Devarajan, Sivananda K. Kanakasabapathy, Fee Li Lie, Peng Xu |
2017-09-05 |
| 9748381 |
Pillar formation for heat dissipation and isolation in vertical field effect transistors |
Kangguo Cheng, Peng Xu, Chen Zhang |
2017-08-29 |
| 9735253 |
Closely packed vertical transistors with reduced contact resistance |
Kangguo Cheng, Juntao Li, Peng Xu |
2017-08-15 |
| 9716142 |
Stacked nanowires |
Kangguo Cheng, Juntao Li, Xin Miao |
2017-07-25 |
| 9691765 |
Fin type field effect transistors with different pitches and substantially uniform fin reveal |
Kangguo Cheng, Thamarai S. Devarajan, Balasubramanian Pranatharthiharan |
2017-06-27 |
| 9685499 |
Nanosheet capacitor |
Kangguo Cheng, Dongbing Shao, Zheng Xu |
2017-06-20 |
| 9679780 |
Polysilicon residue removal in nanosheet MOSFETs |
Donald F. Canaperi, Thamarai S. Devarajan, Nicolas Loubet |
2017-06-13 |
| 9647120 |
Vertical FET symmetric and asymmetric source/drain formation |
Kangguo Cheng, Juntao Li, Peng Xu |
2017-05-09 |
