DL

Darsen D. Lu

IBM: 10 patents #443 of 10,852Top 5%
Globalfoundries: 2 patents #262 of 1,311Top 20%
Overall (2017): #5,112 of 506,227Top 2%
12
Patents 2017

Issued Patents 2017

Patent #TitleCo-InventorsDate
9825094 FinFET PCM access transistor having gate-wrapped source and drain regions Chung H. Lam, Chung-Hsun Lin, Philip J. Oldiges 2017-11-21
9825093 FinFET PCM access transistor having gate-wrapped source and drain regions Chung H. Lam, Chung-Hsun Lin, Philip J. Oldiges 2017-11-21
9786737 FinFET with reduced parasitic capacitance Kangguo Cheng, Xin Miao, Tenko Yamashita 2017-10-10
9761610 Strain release in PFET regions Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim 2017-09-12
9653541 Structure and method to make strained FinFET with improved junction capacitance and low leakage Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim 2017-05-16
9583624 Asymmetric finFET memory access transistor Chung H. Lam, Chung-Hsun Lin, Philip J. Oldiges 2017-02-28
9583492 Structure and method for advanced bulk fin isolation Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim 2017-02-28
9564439 Structure and method for advanced bulk fin isolation Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim 2017-02-07
9553173 Asymmetric finFET memory access transistor Chung H. Lam, Chung-Hsun Lin, Philip J. Oldiges 2017-01-24
9548386 Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim 2017-01-17
9548213 Dielectric isolated fin with improved fin profile Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Kern Rim 2017-01-17
9543323 Strain release in PFET regions Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim 2017-01-10