GS

Ghavam G. Shahidi

IBM: 22 patents #118 of 10,852Top 2%
Globalfoundries: 2 patents #262 of 1,311Top 20%
📍 Pound Ridge, NY: #1 of 4 inventorsTop 25%
🗺 New York: #60 of 12,278 inventorsTop 1%
Overall (2017): #1,069 of 506,227Top 1%
24
Patents 2017

Issued Patents 2017

Showing 1–24 of 24 patents

Patent #TitleCo-InventorsDate
9847442 Field-effect localized emitter photovoltaic device Wilfried E. Haensch, Bahman Hekmatshoartabari, Devendra K. Sadana, Davood Shahrjerdi 2017-12-19
9812599 Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys Bahman Hekmatshoar-Tabari, Marinus Hopstaken, Dae-Gyu Park, Devendra K. Sadana, Davood Shahrjerdi 2017-11-07
9799675 Strain engineering in back end of the line Stephen W. Bedell, Wilfried E. Haensch, Bahman Hekmatshoartabari, Davood Shahrjerdi 2017-10-24
9748281 Integrated gate driver Bahman Hekmatshoartabari 2017-08-29
9746442 Switched-capacitor biosensor device Bahman Hekmatshoartabari, Ali Khakifirooz, Davood Shahrjerdi 2017-08-29
9741871 Self-aligned heterojunction field effect transistor Bahman Hekmatshoartabari, Yanning Sun 2017-08-22
9741889 Contact for silicon heterojunction solar cells Bahman Hekmatshoar-Tabari, Devendra K. Sadana, Davood Shahrjerdi 2017-08-22
9733210 Nanofluid sensor with real-time spatial sensing Kangguo Cheng, Ali Khakifirooz, Davood Shahrjerdi 2017-08-15
9716201 Silicon heterojunction photovoltaic device with wide band gap emitter Bahman Hekmatshoar-Tabari, Ali Khakifirooz, Devendra K. Sadana, Davood Shahrjerdi 2017-07-25
9704569 One time programmable read-only memory (ROM) in SOI CMOS Tak H. Ning, Jeng-Bang Yau 2017-07-11
9687181 Semiconductor device to be embedded within a contact lens Effendi Leobandung 2017-06-27
9685329 Embedded gallium-nitride in silicon William J. Gallagher, Effendi Leobandung, Devendra K. Sadana 2017-06-20
9680045 III-V solar cell structure with multi-layer back surface field Bahman Hekmatshoartabari, Ali Khakifirooz, Davood Shahrjerdi 2017-06-13
9673190 ESD device compatible with bulk bias capability Kangguo Cheng, Bruce B. Doris, Terence B. Hook, Ali Khakifirooz, Pranita Kerber +1 more 2017-06-06
9666615 Semiconductor on insulator substrate with back bias Bahman Hekmatshoartabari, Ali Khakifirooz, Davood Shahrjerdi 2017-05-30
9627378 Methods of forming FINFETs with locally thinned channels from fins having in-situ doped epitaxial cladding Takashi Ando, Robert H. Dennard, Isaac Lauer, Ramachandran Muralidhar 2017-04-18
9620726 Hybrid junction field-effect transistor and active matrix structure Ali Afzali-Ardakani, Tze-Chiang Chen, Bahman Hekmatshoartabari 2017-04-11
9589848 FinFET structures having silicon germanium and silicon channels Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2017-03-07
9590037 p-FET with strained silicon-germanium channel Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2017-03-07
9583378 Formation of germanium-containing channel region by thermal condensation utilizing an oxygen permeable material Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek 2017-02-28
9577065 Back-end transistors with highly doped low-temperature contacts Wilfried E. Haensch, Bahman Hekmatshoar-Tabari, Ali Khakifirooz, Tak H. Ning, Davood Shahrjerdi 2017-02-21
9570485 Solar-powered energy-autonomous silicon-on-insulator device Stephen W. Bedell, Bahman Hekmatshoartabari, Devendra K. Sadana, Davood Shahrjerdi 2017-02-14
9559119 High voltage metal oxide semiconductor field effect transistor integrated into extremely thin semiconductor on insulator process Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz 2017-01-31
9543290 Normally-off junction field-effect transistors and application to complementary circuits Bahman Hekmatshoartabari 2017-01-10