Issued Patents 2017
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9812599 | Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys | Bahman Hekmatshoar-Tabari, Marinus Hopstaken, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi | 2017-11-07 |
| 9711417 | Fin field effect transistor including a strained epitaxial semiconductor shell | Kevin K. Chan, Young-Hee Kim, Masaharu Kobayashi, Jinghong Li | 2017-07-18 |
| 9711416 | Fin field effect transistor including a strained epitaxial semiconductor shell | Kevin K. Chan, Young-Hee Kim, Masaharu Kobayashi, Jinghong Li | 2017-07-18 |
| 9679775 | Selective dopant junction for a group III-V semiconductor device | Kevin K. Chan, Marinus Hopstaken, Young-Hee Kim, Masaharu Kobayashi, Effendi Leobandung +3 more | 2017-06-13 |
| 9590054 | Low temperature spacer for advanced semiconductor devices | Kevin K. Chan, Alfred Grill, Deborah A. Neumayer, Norma E. Sosa, Min Yang | 2017-03-07 |
| 9576964 | Integrated fin and strap structure for an access transistor of a trench capacitor | Kevin K. Chan, Babar A. Khan, Xinhui Wang | 2017-02-21 |
| 9564505 | Changing effective work function using ion implantation during dual work function metal gate integration | Michael P. Chudzik, Martin M. Frank, Herbert L. Ho, Mark J. Hurley, Rashmi Jha +3 more | 2017-02-07 |
| 9564444 | Method of forming integrated fin and strap structure for an access transistor of a trench capacitor | Kevin K. Chan, Babar A. Khan, Xinhui Wang | 2017-02-07 |
| 9553107 | Shallow extension junction | Kevin K. Chan, Pouya Hashemi, Effendi Leobandung, Min Yang | 2017-01-24 |