| 9853109 |
III-V MOSFET with self-aligned diffusion barrier |
Cheng-Wei Cheng, Jack O. Chu, Yanning Sun, Jeng-Bang Yau |
2017-12-26 |
| 9852938 |
Passivated germanium-on-insulator lateral bipolar transistors |
Tak H. Ning, Jeng-Bang Yau |
2017-12-26 |
| 9799756 |
Germanium lateral bipolar transistor with silicon passivation |
Tak H. Ning, Jeng-Bang Yau |
2017-10-24 |
| 9773894 |
Application of super lattice films on insulator to lateral bipolar transistors |
Bahman Hekmatshoartabari, Tak H. Ning |
2017-09-26 |
| 9773865 |
Self-forming spacers using oxidation |
Masaharu Kobayashi, Effendi Leobandung |
2017-09-26 |
| 9752251 |
Self-limiting selective epitaxy process for preventing merger of semiconductor fins |
Eric C. Harley, Yue Ke, Annie Levesque |
2017-09-05 |
| 9711416 |
Fin field effect transistor including a strained epitaxial semiconductor shell |
Young-Hee Kim, Masaharu Kobayashi, Jinghong Li, Dae-Gyu Park |
2017-07-18 |
| 9711417 |
Fin field effect transistor including a strained epitaxial semiconductor shell |
Young-Hee Kim, Masaharu Kobayashi, Jinghong Li, Dae-Gyu Park |
2017-07-18 |
| 9698043 |
Shallow trench isolation for semiconductor devices |
Stephan A. Cohen, Alfred Grill, Deborah A. Neumayer |
2017-07-04 |
| 9691886 |
Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base |
Jin Cai, Christopher P. D'Emic, Tak H. Ning, Jeng-Bang Yau |
2017-06-27 |
| 9679967 |
Contact resistance reduction by III-V Ga deficient surface |
Takashi Ando, John Rozen, Jeng-Bang Yau, Yu Zhu |
2017-06-13 |
| 9679775 |
Selective dopant junction for a group III-V semiconductor device |
Marinus Hopstaken, Young-Hee Kim, Masaharu Kobayashi, Effendi Leobandung, Deborah A. Neumayer +3 more |
2017-06-13 |
| 9673307 |
Lateral bipolar junction transistor with abrupt junction and compound buried oxide |
Pouya Hashemi, Tak H. Ning, Alexander Reznicek |
2017-06-06 |
| 9659655 |
Memory arrays using common floating gate series devices |
Bahman Hekmatshoartabari, Tak H. Ning, Jeng-Bang Yau |
2017-05-23 |
| 9647099 |
Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base |
Jin Cai, Christopher P. D'Emic, Tak H. Ning, Jeng-Bang Yau |
2017-05-09 |
| 9590054 |
Low temperature spacer for advanced semiconductor devices |
Alfred Grill, Deborah A. Neumayer, Dae-Gyu Park, Norma E. Sosa, Min Yang |
2017-03-07 |
| 9576964 |
Integrated fin and strap structure for an access transistor of a trench capacitor |
Babar A. Khan, Dae-Gyu Park, Xinhui Wang |
2017-02-21 |
| 9576096 |
Semiconductor structures including an integrated finFET with deep trench capacitor and methods of manufacture |
Sivananda K. Kanakasabapathy, Babar A. Khan, Masaharu Kobayashi, Effendi Leobandung, Theodorus E. Standaert +1 more |
2017-02-21 |
| 9564444 |
Method of forming integrated fin and strap structure for an access transistor of a trench capacitor |
Babar A. Khan, Dae-Gyu Park, Xinhui Wang |
2017-02-07 |
| 9553107 |
Shallow extension junction |
Pouya Hashemi, Effendi Leobandung, Dae-Gyu Park, Min Yang |
2017-01-24 |
